5秒后页面跳转
IDT7006S45J8 PDF预览

IDT7006S45J8

更新时间: 2024-11-06 14:51:23
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
20页 236K
描述
Multi-Port SRAM, 16KX8, 45ns, CMOS, PQCC68, PLASTIC, LCC-68

IDT7006S45J8 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:LCC
包装说明:PLASTIC, LCC-68针数:68
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.22
最长访问时间:45 ns其他特性:INTERRUPT FLAG; ARBITER; SEMAPHORE
I/O 类型:COMMONJESD-30 代码:S-PQCC-J68
JESD-609代码:e0长度:24.2062 mm
内存密度:131072 bit内存集成电路类型:MULTI-PORT SRAM
内存宽度:8湿度敏感等级:1
功能数量:1端口数量:2
端子数量:68字数:16384 words
字数代码:16000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16KX8输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC68,1.0SQ
封装形状:SQUARE封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:5 V认证状态:Not Qualified
座面最大高度:4.572 mm最大待机电流:0.015 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.34 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn85Pb15)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:24.2062 mmBase Number Matches:1

IDT7006S45J8 数据手册

 浏览型号IDT7006S45J8的Datasheet PDF文件第2页浏览型号IDT7006S45J8的Datasheet PDF文件第3页浏览型号IDT7006S45J8的Datasheet PDF文件第4页浏览型号IDT7006S45J8的Datasheet PDF文件第5页浏览型号IDT7006S45J8的Datasheet PDF文件第6页浏览型号IDT7006S45J8的Datasheet PDF文件第7页 
HIGH-SPEED  
IDT7006S/L  
16K x 8 DUAL-PORT  
STATIC RAM  
one device  
Features  
M/S = H for BUSY output flag on Master,  
M/S = L for BUSY input on Slave  
Busy and Interrupt Flags  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
Fully asynchronous operation from either port  
Devices are capable of withstanding greater than 2001V  
electrostatic discharge  
Battery backup operation—2V data retention  
TTL-compatible, single 5V (±10%) power supply  
Available in 68-pin PGA, quad flatpack, PLCC, and a 64-pin  
TQFP  
True Dual-Ported memory cells which allow simultaneous  
reads of the same memory location  
High-speed access  
– Military:20/25/35/55/70ns(max.)  
– Industrial: 55ns (max.)  
– Commercial:15/17/20/25/35/55ns(max.)  
Low-power operation  
– IDT7006S  
Active: 750mW (typ.)  
Standby: 5mW (typ.)  
– IDT7006L  
Active: 700mW (typ.)  
Standby: 1mW (typ.)  
IDT7006 easily expands data bus width to 16 bits or more  
using the Master/Slave select when cascading more than  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
FunctionalBlockDiagram  
OER  
OEL  
CER  
CEL  
R/WL  
R/WR  
I/O0L- I/O7L  
I/O0R-I/O7R  
I/O  
I/O  
Control  
Control  
(1,2)  
BUSYL  
(1,2)  
BUSYR  
A13L  
A13R  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A0L  
A0R  
14  
14  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CEL  
OEL  
CER  
OER  
R/WR  
R/WL  
SEMR  
INTR  
SEML  
INTL  
M/S  
(2)  
(2)  
2739 drw 01  
NOTES:  
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.  
2. BUSY outputs and INT outputs are non-tri-stated push-pull.  
SEPTEMBER 1999  
1
DSC-2739/11  

与IDT7006S45J8相关器件

型号 品牌 获取价格 描述 数据表
IDT7006S45JG IDT

获取价格

Multi-Port SRAM, 16KX8, 45ns, CMOS, PQCC68, PLASTIC, LCC-68
IDT7006S45JG8 IDT

获取价格

Multi-Port SRAM, 16KX8, 45ns, CMOS, PQCC68, PLASTIC, LCC-68
IDT7006S45L68 ETC

获取价格

x8 Dual-Port SRAM
IDT7006S45L68B ETC

获取价格

x8 Dual-Port SRAM
IDT7006S45PF ETC

获取价格

x8 Dual-Port SRAM
IDT7006S45PFG8 IDT

获取价格

Multi-Port SRAM, 16KX8, 45ns, CMOS, PQFP64, PLASTIC, TQFP-64
IDT7006S45XL ETC

获取价格

x8 Dual-Port SRAM
IDT7006S45XLB ETC

获取价格

x8 Dual-Port SRAM
IDT7006S55F IDT

获取价格

HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006S55FB IDT

获取价格

HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM