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ICT-8CE3 PDF预览

ICT-8CE3

更新时间: 2024-09-19 19:18:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
3页 154K
描述
Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-13, ROHS COMPLIANT, PLASTIC PACKAGE-2

ICT-8CE3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-13包装说明:O-MALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.21最小击穿电压:9.4 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-13JESD-30 代码:O-MALF-W2
JESD-609代码:e3最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL最大功率耗散:1 W
认证状态:Not Qualified最大重复峰值反向电压:8 V
表面贴装:NO技术:AVALANCHE
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

ICT-8CE3 数据手册

 浏览型号ICT-8CE3的Datasheet PDF文件第2页浏览型号ICT-8CE3的Datasheet PDF文件第3页 
ICT-5 thru ICT-45C, e3  
TRANSIENT VOLTAGE SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The ICT-5 through ICT-45C series of Transient Voltage Suppressors  
(TVSs) are designed for the protection of integrated circuits that  
require very low Clamping Voltages (VC) during a transient threat.  
Due to their very fast response time, protection level and high Peak  
Pulse Power (PPP) capability, they are extremely effective in  
providing protection against line transients generated by: voltage  
reversals, capacitive or inductive load switching, electromechanical  
switching, electrostatic discharge and electromagnetic coupling.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
This series of TVS devices is designed to protect  
Bipolar, MOS and Schottky improved integrated  
circuits.  
These TVSs are designed for the protection  
of integrated circuits. Characterized by a  
very low clamping voltage together with a  
low standoff voltage, they afford a high  
degree of protection to: TTL, ECL, DTL,  
MOS, CMOS, VMOS, HMOS, NMOS and  
static memory circuits.  
Transient protection for CMOS, MOS, Bipolar, ICS  
(TTL, ECL, DTL, RTL and linear functions)  
5.0 to 45 volts  
Low clamping ratio  
RoHS Compliant devices available by adding “e3”  
suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
1500 Watts of Peak Pulse Power (PPP)  
CASE: DO-13 welded, hermetically sealed  
metal and glass.  
dissipation at 25oC and 10x1000μs  
FINISH: Tin-lead or RoHS Compliant matte-  
Tin plating solderable per MIL-STD-750,  
method 2026  
tclamping (0 volts to V(BR) min):  
<100 ps theoretical for unidirectional and <5 ns  
for bidirectional  
Operating and Storage temperatures: -65oC to  
POLARITY: Cathode connected to case and  
marked. Bidirectional not marked.  
+175oC.  
WEIGHT: 1.4 grams (approx.)  
MOUNTING POSITION: Any  
Forward surge rating: 200 amps, 1/120 second at  
25oC. (Applies to Unidirectional or single  
direction only).  
Steady State power dissipation: 1.0 watt.  
Repetition rate (duty cycle): .01%  
Clamping Factor: 1.33 @ Full rated power.  
1.20 @ 50% rated power.  
Clamping Factor: The ratio of the actual VC  
(Clamping Voltage) to the actual V(BR)  
(Breakdown Votlage) as measured on a specific  
device.  
Copyright © 2007  
7-09-2007 REV A  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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