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ICTE-10/53-E3 PDF预览

ICTE-10/53-E3

更新时间： 2024-11-08 19:14:03
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管电视
页数 文件大小 规格书
4页 62K
描述
DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor

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ICTE-10/53-E3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.64其他特性：EXCELLENT CLAMPING CAPABILITY
最小击穿电压：11.7 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-PALF-W2
JESD-609代码：e3最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT APPLICABLE
极性：UNIDIRECTIONAL最大功率耗散：6.5 W
认证状态：Not Qualified最大重复峰值反向电压：10 V
表面贴装：NO技术：AVALANCHE
端子面层：MATTE TIN端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT APPLICABLE
Base Number Matches：1

ICTE-10/53-E3 数据手册

 浏览型号ICTE-10/53-E3的Datasheet PDF文件第2页浏览型号ICTE-10/53-E3的Datasheet PDF文件第3页浏览型号ICTE-10/53-E3的Datasheet PDF文件第4页 
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386  
Vishay Semiconductors  
formerly General Semiconductor  
TRANSZORB® Transient Voltage Suppressors  
Stand Off Voltage 5.0 to 18V  
Peak Pulse Power 1500W  
Features  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
• Glass passivated junction  
Case Style 1.5KE  
•
1500W peak pulse power capabililty with a 10/1000µs  
waveform, repetition rate (duty cycle): 0.05%  
• Excellent clamping capability  
• Low incremental surge resistance  
• Very fast response time  
1.0 (25.4)  
MIN.  
• Ideal for data and bus line applications  
• High temperature soldering guaranteed:  
265OC/10 seconds, 0.375" (9.5mm) lead length,  
5lbs. (2.3 kg) tension  
0.210 (5.3)  
0.190 (4.8)  
DIA.  
• Includes 1N6373 thru 1N6386  
0.375 (9.5)  
0.285 (7.2)  
Mechanical Data  
Case: Molded plastic body over passivated junction  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Polarity: For unidirectional types the color band  
denotes the cathode, which is positive with respect  
to the anode under normal TVS operation  
1.0 (25.4)  
MIN.  
Mounting Position: Any  
Weight: 0.045 oz., 1.2 g  
0.042 (1.07)  
0.038 (0.96)  
DIA.  
Packaging Codes – Options (Antistatic):  
51 – 1K per Bulk box, 10K/carton  
Dimensions in inches and (millimeters)  
54 – 1.4K per 13" paper Reel  
(52mm horiz. tape), 4.2K/carton  
73 – 1K per horiz. tape & Ammo box, 10K/carton  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Limit  
Minimum 1500  
See Table 1 & 2  
6.5  
Unit  
W
Peak pulse power dissipation  
PPPM  
with a 10/1000µs waveform(1) (Fig. 1)  
Peak pulse current wih a 10/1000µs waveform(1) (Fig. 3)  
IPPM  
A
Steady state power dissipation,  
TL = 75OC, at lead lengths 0.375” (9.5mm)  
PM(AV)  
W
Peak forward surge current, 8.3ms single half sine-wave  
unidirectional only(2)  
IFSM  
200  
A
Maximum instantaneous forward voltage  
at 100A for unidirectional only  
VF  
3.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +175  
OC  
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2  
(2) 8.3ms single half sine-wave, duty cycle = 4 pulses per minute maximum  
Document Number 88356  
23-May-03  
www.vishay.com  
1
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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
ICTE-10/65 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
ICTE-10/66 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
ICTE-10/66-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
ICTE-10/68-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su

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