Datasheet > ICTE10C

ICTE10C

更新时间： 2024-11-08 11:14:55

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
5页	79K
描述
TRANSZORB Transient Voltage Suppressors

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中文翻译

获取价格

数据手册

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ICTE10C 数据手册

ICTE5 thru ICTE18C, 1N6373 thru 1N6386

Vishay General Semiconductor

TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Available

uni-directional

and

bi-directional

• 1500 W peak pulse power capability

with a 10/1000 μs waveform, repetitive

rate (duty cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

Case Style 1.5KE

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Find out more about Vishay’s Automotive Grade

Product requirements at:

PRIMARY CHARACTERISTICS

V_WM

P_PPM

P_D

5.0 V to 18 V

www.vishay.com/applications

1500 W

6.5 W

TYPICAL APPLICATIONS

I_FSM

200 A

Use in sensitive electronics protection against voltage

transients induced by inductive load switching

and lighting on ICs, MOSFET, signal lines of sensor

units for consumer, computer, industrial and

telecommunication.

T_Jmax.

175 °C

MECHANICAL DATA

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional types, use C suffix (e.g. ICTE18C).

Electrical characteristics apply in both directions.

Case: Molded epoxy body over passivated junction

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, automotive grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the color band

denotes cathode end, no marking on bi-directional

types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

LIMIT

1500

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform ⁽¹⁾(fig. 1)

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾(fig. 3)

Power dissipation on infinite heatsink at T_L= 75 °C (fig. 8)

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Maximum instantaneous forward voltage at 100 A for uni-directional only

Operating junction and storage temperature range

See next table

6.5

P_D

I_FSM

200

V_F

3.5

T_J, T_STG

- 55 to + 175

°C

Notes

⁽¹⁾Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

⁽²⁾8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum

Document Number: 88356

Revision: 07-May-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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与ICTE10C相关器件

型号	品牌	获取价格	描述	数据表
ICTE-10C	MICROSEMI	获取价格	TRANSIENT ABSORPTION ZENER
ICTE-10C	VISHAY	获取价格	TRANSZORB⑩ TRANSIENT VOLTAGE SUPPRESSOR
ICTE-10C	MDE	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
ICTE-10C/100-E3	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup
ICTE-10C/1-E3	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, 1.5KE, 2 PIN, Transient Suppress
ICTE-10C/4	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 10V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
ICTE-10C/4E-E3	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup
ICTE-10C/4F-E3	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup
ICTE-10C/4G	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup
ICTE-10C/53	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup

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