Datasheet > HZS8.2NB3

HZS8.2NB3

更新时间： 2024-09-18 20:12:39

品牌	Logo	应用领域
日立 - HITACHI		测试二极管
页数	文件大小	规格书
7页	34K
描述
Zener Diode, 8.24V V(Z), 2.06%, 0.4W, Silicon, Unidirectional, DO-34, MHD, 2 PIN

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HZS8.2NB3 数据手册

HZS-N Series

Silicon Epitaxial Planar Zener Diodes for Stabilized Power

Supply

ADE-208-124 (Z)

Rev. 0

Features

•

Low leakage, low zener impedance and maximum power dissipation of 400mW are ideally suitedfor

stabilized power supply, etc.

•

Wide spectrum from 1.88V through 38.52V of zener voltage provide flexible application.

Suitable for 5mm-pitch high speed automatic insertion.

Ordering Information

Type No.

Mark

Package Code

HZS-N Series

Type No.

MHD

Outline

Type No.

Cathode band

1. Cathode

2. Anode

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Value

Unit

°C

Power dissipation

Junction temperature

Storage temperature

400

200

Tstg

–55 to +175

°C

12 3 4 5 6 7

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