HZS9.1NB1TD-E

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HZS9.1NB1TD-E 数据手册

HZS-N Series

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

REJ03G0185-0100Z

(Previous: ADE-208-124)

Rev.1.00

Mar.11.2004

Features

•

Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized

power supply, etc.

•

Wide spectrum from 1.88 V through 38.52 V of zener voltage provide flexible application.

Suitable for 5mm-pitch high speed automatic insertion.

Ordering Information

Type No.

Mark

Package Code

HZS-N Series

Type No.

MHD

Pin Arrangement

Type No.

Cathode band

1. Cathode

2. Anode

Rev.1.00, Mar.11.2004, page 1 of 6

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
HZS9.1NB1TE	RENESAS	获取价格	0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, D0-34, DO-34, 2 PIN
HZS9.1NB2	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS9.1NB2TA-E	RENESAS	获取价格	HZS9.1NB2TA-E
HZS9.1NB2TE	RENESAS	获取价格	暂无描述
HZS9.1NB3	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS9.1NB3RX-E	RENESAS	获取价格	暂无描述
HZS9.1NB3RY	RENESAS	获取价格	0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, D0-34, DO-34, 2 PIN
HZS9.1NB3TD-E	RENESAS	获取价格	暂无描述
HZS9.1NB3TE	RENESAS	获取价格	0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, D0-34, DO-34, 2 PIN
HZS9.1NB4	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply