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HZ11C3TD PDF预览

HZ11C3TD

更新时间: 2024-09-21 13:08:31
品牌 Logo 应用领域
瑞萨 - RENESAS 二极管齐纳二极管测试
页数 文件大小 规格书
7页 56K
描述
0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

HZ11C3TD 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.42
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified表面贴装:NO
技术:ZENER端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED工作测试电流:5 mA
Base Number Matches:1

HZ11C3TD 数据手册

 浏览型号HZ11C3TD的Datasheet PDF文件第2页浏览型号HZ11C3TD的Datasheet PDF文件第3页浏览型号HZ11C3TD的Datasheet PDF文件第4页浏览型号HZ11C3TD的Datasheet PDF文件第5页浏览型号HZ11C3TD的Datasheet PDF文件第6页浏览型号HZ11C3TD的Datasheet PDF文件第7页 
HZ Series  
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply  
REJ03G0180-0300Z  
(Previous: ADE-208-117B)  
Rev.3.00  
Mar.11.2004  
Features  
Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized  
power supply, etc.  
Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.  
Ordering Information  
Type No.  
Mark  
Package Code  
HZ Series  
Type No.  
DO-35  
Pin Arrangement  
7
B 2  
2
1
Type No.  
Cathode band  
1. Cathode  
2. Anode  
Rev.3.00, Mar.11.2004, page 1 of 6  

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