HZ11HB3 PDF预览

HZ11HB3

更新时间: 2025-07-15 19:58:51
品牌 Logo 应用领域
瑞萨 - RENESAS 测试二极管
页数 文件大小 规格书
10页 89K
描述
10.9V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, SC-40, 2 PIN

HZ11HB3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-35包装说明:O-XALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.58外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:25 Ω
JEDEC-95代码:DO-35JESD-30 代码:O-XALF-W2
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:10.9 V
子类别:Voltage Reference Diodes表面贴装:NO
技术:ZENER端子形式:WIRE
端子位置:AXIAL最大电压容差:1.83%
工作测试电流:5 mABase Number Matches:1

HZ11HB3 数据手册

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To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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