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HYR1812820G-653 PDF预览

HYR1812820G-653

更新时间： 2024-11-10 22:48:23
品牌 Logo 应用领域
英飞凌 - INFINEON 存储内存集成电路动态存储器时钟
页数 文件大小 规格书
14页 313K
描述
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs)

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中文翻译

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HYR1812820G-653 技术参数

生命周期：Obsolete零件包装代码：DMA
包装说明：DIMM, DIMM184,40针数：184
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.36风险等级：5.84
访问模式：BLOCK ORIENTED PROTOCOL最长访问时间：2.1 ns
其他特性：SELF CONTAINED REFRESH最大时钟频率 (fCLK)：600 MHz
I/O 类型：COMMONJESD-30 代码：R-XDMA-N184
内存密度：2415919104 bit内存集成电路类型：RAMBUS DRAM MODULE
内存宽度：18功能数量：1
端口数量：1端子数量：184
字数：134217728 words字数代码：128000000
工作模式：SYNCHRONOUS组织：128MX18
输出特性：3-STATE封装主体材料：UNSPECIFIED
封装代码：DIMM封装等效代码：DIMM184,40
封装形状：RECTANGULAR封装形式：MICROELECTRONIC ASSEMBLY
电源：1.8/2.5,2.5 V认证状态：Not Qualified
自我刷新：YES子类别：DRAMs
最大供电电压 (Vsup)：2.63 V最小供电电压 (Vsup)：2.37 V
标称供电电压 (Vsup)：2.5 V表面贴装：NO
技术：CMOS端子形式：NO LEAD
端子节距：1 mm端子位置：DUAL
Base Number Matches：1

HYR1812820G-653 数据手册

 浏览型号HYR1812820G-653的Datasheet PDF文件第2页浏览型号HYR1812820G-653的Datasheet PDF文件第3页浏览型号HYR1812820G-653的Datasheet PDF文件第4页浏览型号HYR1812820G-653的Datasheet PDF文件第5页浏览型号HYR1812820G-653的Datasheet PDF文件第6页浏览型号HYR1812820G-653的Datasheet PDF文件第7页 
HYR 16xx20G/HYR 18xx20G  
Rambus RIMM Modules  
Direct RDRAM RIMM Modules  
(with 144 Mbit RDRAMs)  
Overview  
The Direct Rambus™ RIMM™ module is a general purpose high-performance memory subsystem  
suitable for use in a broad range of applications including computer memory, personal computers,  
workstations, and other applications where high bandwidth and low latency are required.  
The Direct Rambus RIMM module consists of 144 Mbit Direct Rambus DRAM (Direct RDRAM™)  
devices. These are extremely high-speed CMOS DRAMs organized as 8M words by 18 bits. The  
use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while  
using conventional system and board design technologies. Direct RDRAM devices are capable of  
sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).  
The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous,  
randomly addressed, memory transactions. The separate control and data buses with independent  
row and column control yield over 95% bus efficiency. The RDRAM's 32-bank architecture supports  
up to four simultaneous transactions per device.  
Form Factor  
The Rambus RIMM modules are offered in a 184-pad 1 mm edge connector pad pitch form factor  
suitable for 184 contact RIMM connectors. The RIMM module is suitable for desktop and other  
system applications. The next figure shows an eight device Rambus RIMM module without heat  
spreader.  
Features  
• High speed 800, 711 & 600 MHz RDRAM  
• Gold plated edge connector pad contacts  
• Serial Presence Detect (SPD) support  
• Operates from a 2.5 V supply (± 5%)  
storage  
• 184 edge connector pads with 1 mm pad  
spacing  
• Low power and powerdown self refresh  
• Maximum module PCB size:  
133.5 mm × 31.75 mm × 1.37 mm  
(5.25” × 1.25” × 0.05”)  
modes  
• Separate Row and Column buses for higher  
efficiency  
• Each RDRAM has 32 banks, for a total of  
,
512, 256 or 128 banks on each 256/288 MB,  
128/144MB or 64/72 MB module  
respectively.  
Fig.1 : Rambus RIMM module  
(without heat spreader)  
INFINEON Technologies  
1
7.00  
1234567...14

中文翻译

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