HYR1812820G-840

更新时间： 2024-11-10 22:48:23

品牌	Logo	应用领域
英飞凌 - INFINEON		动态存储器
页数	文件大小	规格书
14页	313K
描述
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs)

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HYR1812820G-840 数据手册

HYR 16xx20G/HYR 18xx20G

Rambus RIMM Modules

Direct RDRAM RIMM Modules

(with 144 Mbit RDRAMs)

Overview

The Direct Rambus^™RIMM^™module is a general purpose high-performance memory subsystem

suitable for use in a broad range of applications including computer memory, personal computers,

workstations, and other applications where high bandwidth and low latency are required.

The Direct Rambus RIMM module consists of 144 Mbit Direct Rambus DRAM (Direct RDRAM™)

devices. These are extremely high-speed CMOS DRAMs organized as 8M words by 18 bits. The

use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while

using conventional system and board design technologies. Direct RDRAM devices are capable of

sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous,

randomly addressed, memory transactions. The separate control and data buses with independent

row and column control yield over 95% bus efficiency. The RDRAM's 32-bank architecture supports

up to four simultaneous transactions per device.

Form Factor

The Rambus RIMM modules are offered in a 184-pad 1 mm edge connector pad pitch form factor

suitable for 184 contact RIMM connectors. The RIMM module is suitable for desktop and other

system applications. The next figure shows an eight device Rambus RIMM module without heat

spreader.

Features

• High speed 800, 711 & 600 MHz RDRAM

• Gold plated edge connector pad contacts

• Serial Presence Detect (SPD) support

• Operates from a 2.5 V supply (± 5%)

storage

• 184 edge connector pads with 1 mm pad

spacing

• Low power and powerdown self refresh

• Maximum module PCB size:

133.5 mm × 31.75 mm × 1.37 mm

(5.25” × 1.25” × 0.05”)

modes

• Separate Row and Column buses for higher

efficiency

• Each RDRAM has 32 banks, for a total of

512, 256 or 128 banks on each 256/288 MB,

128/144MB or 64/72 MB module

respectively.

Fig.1 : Rambus RIMM module

(without heat spreader)

INFINEON Technologies

7.00

12 3 4 5 6 7...14

中文翻译

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与HYR1812820G-840相关器件

型号	品牌	获取价格	描述	数据表
HYR1812820G-845	INFINEON	获取价格	Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs)
HYR1812840G-653	INFINEON	获取价格	Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
HYR1812840G-745	INFINEON	获取价格	Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
HYR1812840G-840	INFINEON	获取价格	Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
HYR1812840G-845	INFINEON	获取价格	Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
HYR1825640G-653	INFINEON	获取价格	Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
HYR1825640G-745	INFINEON	获取价格	Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
HYR1825640G-840	INFINEON	获取价格	Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
HYR1825640G-845	INFINEON	获取价格	Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
HYR183200G-653	INFINEON	获取价格	Rambus DRAM Module, 32MX18, 53ns, CMOS, RIMM-184

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