Datasheet > HYB25L128160AC-75

HYB25L128160AC-75

更新时间： 2024-11-24 22:06:59

品牌	Logo	应用领域
英飞凌 - INFINEON		动态存储器
页数	文件大小	规格书
50页	957K
描述
128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES

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HYB/E 25L128160AC

128-MBit Mobile-RAM

128-MBit Synchronous Low-Power DRAM in Chipsize Packages

Datasheet (Rev. 2003-02)

•

Automatic and Controlled Precharge

Command

High Performance:

-7.5 -8

Units

Programmable Burst Length: 1, 2, 4, 8 and

full page

f_CK,MAX

t_CK3,MIN

t_AC3,MAX

t_CK2,MIN

t_AC2,MAX

133 125 MHz

Programmable Power Reduction Feature by

partial array activation during Self-Refresh

7.5

5.4

9.5

•

Data Mask for byte control

9.5

Auto Refresh (CBR)

4096 Refresh Cycles / 64ms

Self Refresh with programmble refresh period

Power Down and Clock Suspend Mode

•

8Mbit x 16 organisation

VDD = 2.5V, VDDQ = 1.8V / 2.5V

Random Column Address every CLK

(1-N Rule)

•

Fully Synchronous to Positive Clock Edge

Four Banks controlled by BA0 & BA1

Programmable CAS Latency: 1, 2, 3

•

54-FBGA , with 9 x 6 ball array with 3

depopulated rows, 9 x 8 mm

Programmable Wrap Sequence: Sequential

or Interleave

Operating Temperature Range

Commerical ( 0⁰to 70⁰C)

Extended ( -25^oC to +85^oC)

•

Deep Power Down Mode

The HYB/E 25L128160AC Mobile-RAMs are a new generation of low power, four bank

Synchronous DRAM’s organized as 4 banks × 2Mbit x16 with additional features for mobile

applications. These synchronous Mobile-RAMs achieve high speed data transfer rates by

employing a chip architecture that prefetches multiple bits and then synchronizes the output data to

a system clock. The chip is fabricated using the Infineon advanced process technology.

The device adds new features to the industry standards set for synchronous DRAM products.

Parts of the memory array can be selected for Self-Refresh and the refresh period during Self-

Refresh is programmable in 4 steps which drastically reduces the self refresh current, depending on

the case temperature of the components in the system application. In addition a “Deep Power Down

Mode” is available. Operating the four memory banks in an interleave fashion allows random access

operation to occur at higher rate. A sequential and gapless data rate is possible depending on burst

length, CAS latency and speed grade of the device. The device operates from a 2.5V power supply

for the core and 1.8V for the bus interface.

The Mobile-RAM is housed in a FBGA “chip-size” package. The Mobile-RAM is available in the

commercial (0⁰to 70⁰C) and Extended( -25^oC to +85^oC) temperature range.

INFINEON Technologies

2003-02

12 3 4 5 6 7...50

中文翻译

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与HYB25L128160AC-75相关器件

型号	品牌	获取价格	描述	数据表
HYB25L128160AC-8	INFINEON	获取价格	128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES
HYB25L128800AC-7.5	INFINEON	获取价格	Synchronous DRAM, 16MX8, 5.4ns, CMOS, PBGA54, 9 X 8 MM, FBGA-54
HYB25L128800AC-8	INFINEON	获取价格	Synchronous DRAM, 16MX8, 6ns, CMOS, PBGA54, 9 X 8 MM, FBGA-54
HYB25L256160AC	INFINEON	获取价格	256-Mbit Mobile-RAM
HYB25L256160AC	QIMONDA	获取价格	256-MBit Mobile-RAM
HYB25L256160AC-7.5	QIMONDA	获取价格	256-MBit Mobile-RAM
HYB25L256160AC-7.5	INFINEON	获取价格	BJAWBMSpecialty DRAMs Mobile-RAM
HYB25L256160AC-75	INFINEON	获取价格	256-Mbit Mobile-RAM
HYB25L256160AC-8	INFINEON	获取价格	256-Mbit Mobile-RAM
HYB25L256160AF	INFINEON	获取价格	256MBit Mobile-RAM

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