Datasheet > HYB25R128160C-745

HYB25R128160C-745

更新时间： 2024-02-25 21:53:09

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
92页	910K
描述
RAMBUS DRAM

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数据手册

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Direct RDRAM

128/144-MBit (256K×16/18×32s)

Overview

The Rambus Direct RDRAM is a general purpose high-performance memory device suitable for

use in a broad range of applications including computer memory, graphics, video, and any other

application where high bandwidth and low latency are required.

The 128/144-Mbit Direct Rambus DRAMs (RDRAM ) are extremely high-speed CMOS DRAMs

organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology

permits 600 MHz to 800 MHz transfer rates while using conventional system and board design

technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two

bytes (10 ns per sixteen bytes).

The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple,

simultaneous randomly addressed memory transactions. The separate control and data buses with

independent row and column control yield over 95% bus efficiency. The Direct RDRAM’s thirty-two

banks support up to four simultaneous transactions.

System oriented features for mobile, graphics and large memory systems include power

management, byte masking, and x18 organization. The two data bits in the x18 organization are

general and can be used for additional storage and bandwidth or for error correction.

Features

• Highest sustained bandwidth per DRAM device

– 1.6 GB/s sustained data transfer rate

– Separate control and data buses for maximized efficiency

– Separate row and column control buses for easy scheduling and highest performance

– 32 banks: four transactions can take place simultaneously at full bandwidth data rates

• Low latency features

– Write buffer to reduce read latency

– 3 precharge mechanisms for controller flexibility

– Interleaved transactions

• Advanced power management:

– Multiple low power states allows flexibility in power consumption versus time to transition to

active state

– Power-down self-refresh

• Organization: 1 Kbyte pages and 32 banks, x16/18

– x18 organization allows ECC configurations or increased storage/bandwidth

– x16 organization for low cost applications

• Uses Rambus Signaling Level (RSL) for up to 800 MHz operation

• The ODF function is allready implemented in this device and will be described in a later

version of this document

INFINEON Technologies

2.00

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与HYB25R128160C-745相关器件

型号	品牌	获取价格	描述	数据表
HYB25R128160C-840	ETC	获取价格	RAMBUS DRAM
HYB25R128160C-845	ETC	获取价格	RAMBUS DRAM
HYB25R144180C-653	INFINEON	获取价格	Rambus DRAM, 8MX18, 53ns, CMOS, PBGA62, FBGA-62
HYB25R144180C-745	INFINEON	获取价格	Rambus DRAM, 8MX18, 45ns, CMOS, PBGA62, FBGA-62
HYB25R144180C-840	ETC	获取价格	RAMBUS DRAM
HYB25R144180C-845	INFINEON	获取价格	Rambus DRAM, 8MX18, 45ns, CMOS, PBGA62, FBGA-62
HYB25R288180C-653	ETC	获取价格	DRAM\|RAMBUS\|16MX18\|CMOS\|BGA\|66PIN\|PLASTIC
HYB25R288180C-745	ETC	获取价格	DRAM\|RAMBUS\|16MX18\|CMOS\|BGA\|66PIN\|PLASTIC
HYB25R288180C-840	ETC	获取价格	DRAM\|RAMBUS\|16MX18\|CMOS\|BGA\|66PIN\|PLASTIC
HYB25R288180C-845	ETC	获取价格	DRAM\|RAMBUS\|16MX18\|CMOS\|BGA\|66PIN\|PLASTIC

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