Datasheet > HYB25R72180C-645

HYB25R72180C-645

更新时间： 2024-11-24 23:57:19

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
62页	2626K
描述
RAMBUS DRAM

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数据手册

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HYB25R72180C-645 数据手册

Direct RDRAM^™

72-Mbit (256Kx16/18x16d)

RAMBUS

Overview

The Rambus Direct RDRAM™ is a general purpose

high-performance memory device suitable for use in a

broad range of applications including computer

memory, graphics, video, and any other application

where high bandwidth and low latency are required.

The 72-Mbit Direct Rambus DRAMs (RDRAM ) are

extremely high-speed CMOS DRAMs organized as 4M

words by 18 bits. The use of Rambus Signaling Level

(RSL) technology permits 600MHz to 800MHz transfer

rates while using conventional system and board

design technologies. Direct RDRAM devices are

capable of sustained data transfers at 1.25 ns per two

bytes (10ns per sixteen bytes).

The architecture of the Direct RDRAMs allows the

highest sustained bandwidth for multiple, simulta-

neous randomly addressed memory transactions. The

separate control and data buses with independent row

and column control yield over 95% bus efficiency. The

Direct RDRAM's sixteen banks support up to four

simultaneous transactions.

Figure 1: Direct RDRAM CSP Package

The 72-Mbit Direct RDRAMs are offered in a CSP hori-

zontal package suitable for desktop as well as low-

profile add-in card and mobile applications.

System oriented features for mobile, graphics and large

memory systems include power management, byte

masking, and x18 organization. The two data bits in the

x18 organization are general and can be used for addi-

tional storage and bandwidth or for error correction.

Direct RDRAMs operate from a 2.5 volt supply.

Key Timing Parameters/Part Number

I/O Freq.

MHz

Part

Number

Organization

trac

Features

4M x 18

600

711

800

53 ns HYB25R72180C-653

45 ns HYB25R72180C-745

50 ns HYB25R72180C-750

45 ns HYB25R72180C-645

45 ns HYB25R72180C-845

40 ns HYB25R72180C-840

■

Highest sustained bandwidth per DRAM device

- 1.6GB/ s sustained data transfer rate

- Separate control and data buses for maximized

efficiency

- Separate row and column control buses for

easy scheduling and highest performance

- 16 banks: four transactions can take place simul-

taneously at full bandwidth data rates

■

Low latency features

- Write buffer to reduce read latency

- 3 precharge mechanisms for controller flexibility

- Interleaved transactions

Advanced power management:

- Multiple low power states allows flexibility in

power consumption versus time to transition to

active state

- Power-down self-refresh

■

Organization: 1Kbyte pages and 16 banks, x 18

- x18 organization allows ECC configurations or

increased storage/ bandwidth

Uses Rambus Signaling Level (RSL) for up to

800MHz operation

INFINEON Technologies Version 1.0

Preliminary Information

Page 1

12 3 4 5 6 7...62

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与HYB25R72180C-645相关器件

型号	品牌	获取价格	描述	数据表
HYB25R72180C-745	ETC	获取价格	RAMBUS DRAM
HYB25R72180C-750	ETC	获取价格	RAMBUS DRAM
HYB25S128160TC-3	INFINEON	获取价格	MEMORY SPECTRUM
HYB25S128160TC-37	INFINEON	获取价格	MEMORY SPECTRUM
HYB25S128160TC-5	INFINEON	获取价格	MEMORY SPECTRUM
HYB25S128160TC-6	INFINEON	获取价格	MEMORY SPECTRUM
HYB25S128160TC-7	INFINEON	获取价格	MEMORY SPECTRUM
HYB25S128160TC-75	INFINEON	获取价格	MEMORY SPECTRUM
HYB25S128160TC-7F	INFINEON	获取价格	MEMORY SPECTRUM
HYB25S128160TC-8	INFINEON	获取价格	MEMORY SPECTRUM

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