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HY62UF16403A-I PDF预览

HY62UF16403A-I

更新时间: 2024-02-29 03:04:00
品牌 Logo 应用领域
海力士 - HYNIX 静态存储器
页数 文件大小 规格书
10页 188K
描述
256Kx16bit full CMOS SRAM

HY62UF16403A-I 数据手册

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HY62UF16403A Series  
256Kx16bit full CMOS SRAM  
Document Title  
256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM  
Revision History  
Revision No History  
Draft Date  
Remark  
Final  
09  
Marking Information add  
Dec.18.2000  
tBLZ / tOLZ value is changed  
Output Load is redefined  
Isb, Isb1, Vdr, Iccdr are redefined  
10  
11  
Changed Logo  
Mar.23.2001  
Jun.07.2001  
Final  
Final  
Changed Isb1 values  
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility  
for use of circuits described. No patent licenses are implied.  
Rev.11 / Jun.01  
Hynix Semiconductor  

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HY62UF16403ASLM HYNIX

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HY62UF16403ASLM-55 HYNIX

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HY62UF16403ASLM-55I HYNIX

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