Datasheet > HY62UF16400SLM-100

HY62UF16400SLM-100

更新时间： 2023-01-02 19:17:40

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器
页数	文件大小	规格书
13页	195K
描述
Standard SRAM, 256KX16, 100ns, CMOS, PBGA48, MICRO, BGA-48

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中文翻译

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数据手册

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HY62UF16400/ HY62QF16400/ HY62EF16400/

HY62SF16400 Series 256Kx16bit full CMOS SRAM

PRELIMINARY

FEATURES

DESCRIPTION

Fully static operation and Tri-state output

TTL compatible inputs and outputs

Battery backup(LL/SL-part)

- 1.5V(min) data retention

Standard pin configuration

- 48ball uBGA

The

HY62UF16400

HY62QF16400

HY62EF16400 / HY62SF16400 is a high speed,

super low power and 4Mbit full CMOS SRAM

organized as 262,144 words by 16bits. The

HY62UF16400 / HY62QF16400 / HY62EF16400 /

HY62SF16400 uses high performance full CMOS

process technology and is designed for high

speed and low power circuit technology. It is

particularly well-suited for the high density low

power system application. This device has a data

retention mode that guarantees data to remain

valid at a minimum power supply voltage of 1.5V.

Product

No.

Voltage

(V)

Speed

(ns)

Operation

Current(mA)

Standby Current(uA)

Temperature

(°C)

HY62UF16400

HY62UF16400-I

HY62QF16400

HY62QF16400-I

HY62EF16400

HY62EF16400-I

HY62SF16400

HY62SF16400-I

3.0

2.5

2.0

1.8

70/85/100

85/100/120

100/120/150

120/150/200

0~70(Normal)

-40~85(E.T.)

0~70(Normal)

-40~85(E.T.)

0~70(Normal)

-40~85(E.T.)

0~70(Normal)

-40~85(E.T.)

Note 1. E.T. : Extended Temperature, Normal : Normal Temperature

2. Current value is max.

PIN CONNECTION ( Top View )

BLOCK DIAGRAM

ROW

DECODER

I/O1

/LB /OE A0 A1 A2 NC

IO9 /UB A3 A4 /CS IO1

IO10 IO11 A5 A6 IO2 IO3

Vss IO12 A17 A7 IO4 Vcc

Vcc IO13 NC A16 IO5 Vss

IO15 IO14 A14 A15 IO6 IO7

IO16 NC A12 A13 /WE IO8

NC A8 A9 A10 A11 NC

I/O8

I/O9

MEMORY ARRAY

1024x128x16

I/O16

A17

/CS

/OE

/LB

/UB

/WE

PIN DESCRIPTION

Pin Name

Pin Funtion

Pin Name

Pin Funtion

/CS

/WE

/OE

/LB

Chip Select

Write Enable

Output Enable

Low Byte Control(I/O1~I/O8)

I/O1~I/O16

A0~A17

Vcc

Data Input/Output

Address Input

Power(3.0V/2.5V/2.0V/1.8V)

Ground

Vss

/UB

Upper Byte Control(I/O9~I/O16) NC

No Connection

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.04 /Feb. 99

Hyundai Semiconductor

12 3 4 5 6 7...13

中文翻译

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与HY62UF16400SLM-100相关器件

型号	品牌	获取价格	描述	数据表
HY62UF16401ALLM-55	HYNIX	获取价格	Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, MICRO, BGA-48
HY62UF16401ALLM-70	HYNIX	获取价格	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, MICRO, BGA-48
HY62UF16401ALLM-70I	HYNIX	获取价格	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, MICRO, BGA-48
HY62UF16401ASLM-70I	HYNIX	获取价格	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, MICRO, BGA-48
HY62UF16401ASLM-85	HYNIX	获取价格	Standard SRAM, 256KX16, 85ns, CMOS, PBGA48, MICRO, BGA-48
HY62UF16401ASLM-85I	HYNIX	获取价格	Standard SRAM, 256KX16, 85ns, CMOS, PBGA48, MICRO, BGA-48
HY62UF16403A	HYNIX	获取价格	256Kx16bit full CMOS SRAM
HY62UF16403A-I	HYNIX	获取价格	256Kx16bit full CMOS SRAM
HY62UF16403ALLM	HYNIX	获取价格	256Kx16bit full CMOS SRAM
HY62UF16403ALLM-55I	HYNIX	获取价格	Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, MICRO, BGA-48

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