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HY5Y5A6DF-HF PDF预览

HY5Y5A6DF-HF

更新时间: 2024-02-07 01:53:03
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器内存集成电路
页数 文件大小 规格书
25页 214K
描述
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54

HY5Y5A6DF-HF 技术参数

生命周期:Obsolete包装说明:FBGA, BGA54,9X9,32
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:5.4 ns最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:S-PBGA-B54内存密度:268435456 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:16
端子数量:54字数:16777216 words
字数代码:16000000最高工作温度:70 °C
最低工作温度:-25 °C组织:16MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA54,9X9,32
封装形状:SQUARE封装形式:GRID ARRAY, FINE PITCH
电源:3/3.3 V认证状态:Not Qualified
刷新周期:8192连续突发长度:1,2,4,8,FP
最大待机电流:0.00035 A子类别:DRAMs
最大压摆率:0.18 mA表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOMBase Number Matches:1

HY5Y5A6DF-HF 数据手册

 浏览型号HY5Y5A6DF-HF的Datasheet PDF文件第2页浏览型号HY5Y5A6DF-HF的Datasheet PDF文件第3页浏览型号HY5Y5A6DF-HF的Datasheet PDF文件第4页浏览型号HY5Y5A6DF-HF的Datasheet PDF文件第6页浏览型号HY5Y5A6DF-HF的Datasheet PDF文件第7页浏览型号HY5Y5A6DF-HF的Datasheet PDF文件第8页 
Preliminary  
HY5Y5A6D(L/S)F(P)-xF  
4Banks x 4M x 16bits Synchronous DRAM  
BASIC FUNCTIONAL DESCRIPTION  
Mode Register  
BA1  
0
BA0  
0
A11  
0
A10  
0
A9  
A8  
0
A7  
0
A6  
A5  
A4  
A3  
BT  
A2  
A1  
A0  
OP Code  
CAS Latency  
Burst Length  
OP Code  
A9  
0
Write Mode  
Burst Read and Burst Write  
Burst Read and Single Write  
Burst Type  
1
A3  
0
Burst Type  
Sequential  
Interleave  
1
CAS Latency  
Burst Length  
A6  
0
A5  
0
A4  
0
CAS Latency  
Reserved  
1
Burst Length  
A2  
A1  
A0  
A3 = 0  
A3=1  
0
0
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
2
1
2
4
8
0
1
0
2
0
1
1
3
4
1
0
0
Reserved  
Reserved  
Reserved  
Reserved  
8
1
0
1
Reserved  
Reserved  
Reserved  
Full page  
Reserved  
Reserved  
Reserved  
Reserved  
1
1
0
1
1
1
Rev 0.3 / Aug. 2003  
5

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