Datasheet > HY5V72DM-H

HY5V72DM-H

更新时间： 2024-01-29 17:48:16

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器
页数	文件大小	规格书
13页	284K
描述
DRAM

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技术参数
数据手册

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HY5V72DM-H 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

HY5V72DM-H 数据手册

Preliminary

HY5V72D(L/S)M(P) Series

4Banks x 4M x 32bits Synchronous DRAM

ABSOLUTE MAXIMUM RATING

Parameter

Symbol

Rating

Unit

^oC

Ambient Temperature

0 ~ 70

^oC

Storage Temperature

TSTG

VIN, VOUT

VDD

-55 ~ 125

-1.0 ~ 4.6

Voltage on Any Pin relative to VSS

Voltage on VDD relative to VSS

Voltage on VDDQ relative to VSS

Short Circuit Output Current

Power Dissipation

VDDQ

IOS

Soldering Temperature ^.Time

260 ^.10

^oC ^.Sec

TSOLDER

DC OPERATING CONDITION (TA= 0 to 70 C )

Parameter

Power Supply Voltage

Input High Voltage

Input Low Voltage

Symbol

VDD, VDDQ

VIH

Min

3.0

2.0

Typ

3.3

Max

Unit

Note

1, 2

1, 3

3.6

VDDQ+0.3

0.8

VIL

-0.3

Note : 1. All voltages are referenced to VSS = 0V

2. VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.

3. VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration

AC OPERATING TEST CONDITION (TA= 0 to 70 C, VDD=3.3±0.3V, VSS=0V)

Parameter

AC Input High/Low Level Voltage

Input Timing Measurement Reference Level Voltage

Input Rise/Fall Time

Output Timing Measurement Reference Level Voltage

Output Load Capacitance for Access Time Measurement

Symbol

VIH / VIL

Vtrip

Value

2.4/0.4

1.4

Unit

Note

tR / tF

Voutref

Vtt=1.4V

Note :

RT=250 Ω

Output

50pF

DC Output Load Circuit

AC Output Load Circuit

Rev. 0.2 / May. 2004

1...4 5 678 9 10...13

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