Datasheet > HY29F400AR-90

HY29F400AR-90

更新时间： 2024-09-17 05:10:11

品牌	Logo	应用领域
海力士 - HYNIX		ISM频段光电二极管内存集成电路
页数	文件大小	规格书
43页	417K
描述
Flash, 512KX8, 90ns, PDSO48, REVERSE, TSOP-48

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技术参数
数据手册

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HY29F400AR-90 技术参数

生命周期：	Obsolete	零件包装代码：	TSOP
包装说明：	REVERSE, TSOP-48	针数：	48
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.84
最长访问时间：	90 ns	其他特性：	MINIMUM 100K PROGRAM/ERASE CYCLE
备用内存宽度：	16	启动块：	BOTTOM/TOP
JESD-30 代码：	R-PDSO-G48	JESD-609代码：	e6
长度：	18.4 mm	内存密度：	4194304 bit
内存集成电路类型：	FLASH	内存宽度：	8
功能数量：	1	端子数量：	48
字数：	524288 words	字数代码：	512000
工作模式：	ASYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	512KX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP1-R
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
并行/串行：	PARALLEL	编程电压：	5 V
认证状态：	Not Qualified	座面最大高度：	1.2 mm
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	TIN BISMUTH	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
类型：	NOR TYPE	宽度：	12 mm
Base Number Matches：	1

HY29F400AR-90 数据手册

HY29F400A Series

4 Megabit 5.0 volt-only Sector Erase Flash Memory

KEY FEATURES

•

Ready//Busy

•

5.0 V± 10% Read, Program, and Erase

Minimizes system-level power requirements

High performance

45 ns access time

Compatible with JEDEC-Standard Commands

RY//BY output pin for detection of programming

or erase cycle completion

/RESET

Hardware pin resets the internal state machine

to the read mode

Internal Erase Algorithms

Uses software commands, pinouts, and

packages following industry standards for

single power supply Flash memory

Automatically erases a sector, any combination

of sectors, or the entire chip

•

Minimum 100,000 Program/Erase Cycles

Sector Erase Architecture

Internal Programming Algorithms

Automatically programs and verifies data at a

specified address.

One 16 Kbytes, two 8 Kbytes, one 32 Kbytes,

and seven 64 Kbytes (byte mode)

Low Power Consumption

Any combination of sectors can be erased

concurrently; also supports full chip erase

20 mA typical active read current for Byte Mode

28 mA typical active read current for Word Mode

30 mA typical program/erase current

•

Erase Suspend/Resume

Suspend a sector erase operation to allow a

data read in a sector not being erased within

the same device

•

Sector Protection

Hardware method disables any combination

of sectors from a program or erase operation

Boot Code Sector Architecture

DESCRIPTION

operations.

The HY29F400A is an 4 Megabit, 5.0 volt-only CMOS

Flash memory device organized as a 512 Kbytes of 8-

bits each, or 256 Kbytes of 16 bits each. The device

is offered in standard 44-pin PSOP and 48-pin

TSOP packages. It is designed to be programmed

and erased in-system with a 5.0 volt power-supply

and can also be programmed in standard PROM

programmers.

The HY29F400A is programmed by executing the

program command sequence. This will start the

internal byte/word programming algorithm that

automatically times the program pulse widths

and also verifies proper cell margin. Erase is ac-

complished by executing either the sector erase

or chip erase command sequence. This will start

the internal erasing algorithm that automatically

times the erase pulse width and also verifies

proper cell margin. No preprogramming is re-

quired prior to execution of the internal erase al-

gorithm. Sectors of the HY29F400A Flash

memory array are electrically erased via Fowler-

Nordheim tunneling. Bytes/words are pro-

grammed one byte/word at a time using a hot

electron injection mechanism.

With access times of 45ns, 55ns, 70ns, 90 ns, 120

ns and 150 ns, the HY29F400A has separate chip

enable (/CE), write eable (/WE), and output enable (/

OE) controls. Hyundai Flash memory devices re-

liably store memory data even after 100,000 pro-

gram/erase cycles.

The HY29F400A is entirely pin and command set

compatible with the JEDEC standard for 4Mega-

bit Flash memory devices. Commands are writ-

ten to the command register using standard mi-

croprocessor write timings. Register contents

serve as input to an internal state-machine that

controls the erase and programming circuitry.

Write cycles also internally latch addresses and

data needed for the programming and erase

The HY29F400A features a sector erase architec-

ture. The device memory array is divided into one

16 Kbytes, two 8 Kbytes, one 32 Kbytes, and

seven 64 Kbytes. Sectors can be erased indi-

vidually or in groups without affecting the data in

other sectors. Multiple sector erase and full chip

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits

described. No patent licences are implied.

Rev.03/Aug.97

Hyundai Semiconductor

12 3 4 5 6 7...43

中文翻译

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与HY29F400AR-90相关器件

型号	品牌	获取价格	描述	数据表
HY29F400AR-90E	HYNIX	获取价格	Flash, 512KX8, 90ns, PDSO48, REVERSE, TSOP-48
HY29F400AR-90I	HYNIX	获取价格	Flash, 512KX8, 90ns, PDSO48, REVERSE, TSOP-48
HY29F400AT-12I	HYNIX	获取价格	Flash, 512KX8, 120ns, PDSO48, TSOP-48
HY29F400AT-15	HYNIX	获取价格	Flash, 512KX8, 150ns, PDSO48, TSOP-48
HY29F400AT-15I	HYNIX	获取价格	Flash, 512KX8, 150ns, PDSO48, TSOP-48
HY29F400ATG-50	HYNIX	获取价格	4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400ATG-50I	HYNIX	获取价格	4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400ATG-55	HYNIX	获取价格	4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400ATG-55I	HYNIX	获取价格	4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400ATG-70	HYNIX	获取价格	4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory

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