HY29DS163TT-13

更新时间： 2024-11-01 03:00:11

品牌	Logo	应用领域
海力士 - HYNIX		闪存
页数	文件大小	规格书
48页	546K
描述
16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

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中文翻译

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数据手册

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HY29DS163TT-13 数据手册

HY29DS162/HY29DS163

16 Megabit (2M x 8/1M x 16) Super-Low Voltage,

Dual Bank, Simultaneous Read/Write, Flash Memory

KEY FEATURES

n Data# Polling and Toggle Bits

n Single Power Supply Operation

− Read, program, and erase operations

from 1.8 to 2.2 V (2.0V ± 10%)

− Provide software confirmation of completion

of program or erase operations

n Ready/Busy# Pin

− Ideal for battery-powered applications

n Simultaneous Read/Write Operations

− Host system can program or erase in one

bank while simultaneously reading from any

sector in the other bank with zero latency

between read and write operations

− Provides hardware confirmation of

completion of program or erase operations

n Erase Suspend

− Suspends an erase operation to allow

programming data to or reading data from

a sector in the same bank

n High Performance

− Erase Resume can then be invoked to

complete the suspended erasure

n Hardware Reset Pin (RESET#) Resets the

Device to Reading Array Data

− 120 and 130 ns access time versions with

± 10% power supply and 30pF load

n Ultra Low Power Consumption (Typical

Values)

n WP#/ACC Input Pin

− Automatic sleep mode current: 200 nA

− Write protect (WP#) function allows

hardware protection of two outermost boot

sectors, regardless of sector protect status

− Acceleration (ACC) function provides

accelerated program times

− Standby mode current: 200 nA

− Read current: 5 mA (at 5 MHz)

− Program/erase current: 15 mA

n Boot-Block Sector Architecture with 39

Sectors in Two Banks for Fast In-System

Code Changes

n Fast Program and Erase Times

− Sector erase time: 1 sec typical

− Byte/Word program time utilizing

Acceleration function: 13 µs typical

n Space Efficient Packaging

n Secured Sector: An Extra 64 Kbyte Sector

that Can Be:

− Factory locked and identifiable: 16 bytes

available for a secure, random factory-

programmed Electronic Serial Number

− Customer lockable: Can be read, program-

med, or erased just like other sectors

n Flexible Sector Architecture

− 48-pin TSOP and 48-ball FBGA packages

LOGIC DIAGRAM

− Sector Protection allows locking of a

sector or sectors to prevent program or

erase operations within that sector

− Temporary Sector Unprotect allows

changes in locked sectors (requires high

voltage on RESET# pin)

A[19:0]

CE#

DQ[7:0]

n Automatic Erase Algorithm Erases Any

Combination of Sectors or the Entire Chip

n Automatic Program Algorithm Writes and

Verifies Data at Specified Addresses

n Compliant with Common Flash Memory

Interface (CFI) Specification

n Minimum 100,000 Write Cycles per Sector

(1,000,000 cycles Typical)

n Compatible with JEDEC Standards

− Pinout and software compatible with

single-power supply Flash devices

− Superior inadvertent write protection

DQ[14:8]

DQ[15]/A[-1]

WP#/ACC

RY/BY#

OE#

W E#

RESET#

BYTE#

Preliminary

Revision 1.3, April 2001

12 3 4 5 6 7...48

中文翻译

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与HY29DS163TT-13相关器件

型号	品牌	获取价格	描述	数据表
HY29DS163TT-13I	HYNIX	获取价格	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS322	HYNIX	获取价格	32 Megabit (4M x 8/2M x16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Me
HY29DS322BF-10	ETC	获取价格	EEPROM
HY29DS322BF-11	ETC	获取价格	EEPROM
HY29DS322BF-12	ETC	获取价格	EEPROM
HY29DS322BT-10	ETC	获取价格	EEPROM
HY29DS322BT-11	ETC	获取价格	EEPROM
HY29DS322BT-12	ETC	获取价格	EEPROM
HY29DS322TF-10	ETC	获取价格	EEPROM
HY29DS322TF-11	ETC	获取价格	EEPROM

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