Datasheet > HY29DS322BT-11

HY29DS322BT-11

更新时间： 2024-10-31 23:56:59

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
6页	289K
描述
EEPROM

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中文翻译

获取价格

数据手册

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HY29DS322BT-11 数据手册

HY29DS322/HY29DS323

32 Megabit (4M x 8/2M x16) Super-Low Voltage,

Dual Bank, Simultaneous Read/Write, Flash Memory

KEY FEATURES

n Single Power Supply Operation

n Data# Polling and Toggle Bits

− Read, program, and erase operations

− Provide software confirmation of completion

from 1.8 to 2.2 V (2.0V ± 10%)

of program or erase operations

− Ideal for battery-powered applications

n Simultaneous Read/Write Operations

− Host system can program or erase in one

bank while simultaneously reading from any

sector in the other bank with zero latency

between read and write operations

n High Performance

n Ready/Busy# Pin

− Provides hardware confirmation of

completion of program or erase operations

n Erase Suspend

− Suspends an erase operation to allow

programming data to or reading data from

a sector in the same bank

− 100, 110 and 120 ns access time versions

n Ultra Low Power Consumption (Typical

Values)

− Erase Resume can then be invoked to

complete the suspended erasure

n Hardware Reset Pin (RESET#) Resets the

Device to Reading Array Data

n WP#/ACC Input Pin

− Automatic sleep mode current: 5 µA

− Standby mode current: 5 µA

− Read current: 5 mA (at 5 MHz)

− Program/erase current: 20 mA

n Boot-Block Sector Architecture with 71

Sectors in Two Banks for Fast In-System

Code Changes

− Write protect (WP#) function allows

hardware protection of two outermost boot

sectors, regardless of sector protect status

− Acceleration (ACC) function provides

accelerated program times

n Secured Sector: An Extra 64 Kbyte Sector

that Can Be:

n Fast Program and Erase Times

− Sector erase time: 2 sec typical

− Byte/Word program time utilizing

Acceleration function: 10 µs typical

n Space Efficient Packaging

− 48-pin TSOP and 48-ball FBGA

packages

− Factory locked and identifiable: 16 bytes

available for a secure, random factory

Electronic Serial Number

− Customer lockable: Can be read, program-

med, or erased just like other sectors

n Flexible Sector Architecture

− Sector Protection allows locking of a

sector or sectors to prevent program or

erase operations within that sector

− Temporary Sector Unprotect allows

changes in locked sectors (requires high

voltage on RESET# pin)

n Automatic Erase Algorithm Erases Any

Combination of Sectors or the Entire Chip

n Automatic Program Algorithm Writes and

Verifies Data at Specified Addresses

n Compliant with Common Flash Memory

Interface (CFI) Specification

LOGIC DIAGRAM

A[20:0]

CE#

DQ[14:0]

DQ[15]/A[-1]

WP#/ACC

RY/BY#

OE#

W E #

n Minimum 100,000 Write Cycles per Byte/

Word

n Compatible with JEDEC Standards

− Pinout and software compatible with

single-power supply Flash devices

− Superior inadvertent write protection

RESET#

BYTE#

Product Brief May 2001

12 3 4 5 6

中文翻译

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与HY29DS322BT-11相关器件

型号	品牌	获取价格	描述	数据表
HY29DS322BT-12	ETC	获取价格	EEPROM
HY29DS322TF-10	ETC	获取价格	EEPROM
HY29DS322TF-11	ETC	获取价格	EEPROM
HY29DS322TF-12	ETC	获取价格	EEPROM
HY29DS322TT-10	ETC	获取价格	EEPROM
HY29DS322TT-11	ETC	获取价格	EEPROM
HY29DS322TT-12	ETC	获取价格	EEPROM
HY29DS323	HYNIX	获取价格	32 Megabit (4M x 8/2M x16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Me
HY29DS323BF-10	ETC	获取价格	EEPROM
HY29DS323BF-11	ETC	获取价格	EEPROM

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