Datasheet > HY29F002

HY29F002

更新时间： 2024-02-04 08:26:17

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
38页	381K
描述
2M(X8)\|5.0V\|45\|NOR FLASH - 2M

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数据手册

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HY29F002 数据手册

HY29F002T

2 Megabit (256K x 8), 5 Volt-only, Flash Memory

KEY FEATURES

n 5 Volt Read, Program, and Erase

n Sector Protection

– Minimizes system-level power requirements

n High Performance

– Any combination of sectors may be

locked to prevent program or erase

operations within those sectors

– Access times as fast as 45 ns

n Low Power Consumption

– 20 mA typical active read current

– 30 mA typical program/erase current

– 1 µA typical CMOS standby current

n Compatible with JEDEC Standards

– Package, pinout and command-set

compatible with the single-supply Flash

device standard

– Provides superior inadvertent write

protection

n Sector Erase Architecture

– Boot sector architecture with top boot

block location

n Temporary Sector Unprotect

– Allows changes in locked sectors

(requires high voltage on RESET# pin)

n Internal Erase Algorithm

– Automatically erases a sector, any

combination of sectors, or the entire chip

n Internal Programming Algorithm

– Automatically programs and verifies data

at a specified address

n Fast Program and Erase Times

– Byte programming time: 7 µs typical

– Sector erase time: 1.0 sec typical

– Chip erase time: 7 sec typical

n Data# Polling and Toggle Status Bits

– Provide software confirmation of

completion of program or erase

– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte

and three 64K byte sectors

– A command can erase any combination of

sectors

operations

– Supports full chip erase

n Minimum 100,000 Program/Erase Cycles

n Space Efficient Packaging

n Erase Suspend/Resume

– Temporarily suspends a sector erase

operation to allow data to be read from, or

programmed into, any sector not being

erased

– Available in industry-standard 32-pin

TSOP and PLCC packages

GENERAL DESCRIPTION

LOGIC DIAGRAM

The HY29F002T is an 2 Megabit, 5 volt-only

CMOS Flash memory organized as 262,144

(256K) bytes. The device is offered in industry-

standard 32-pin TSOP and PLCC packages.

The HY29F002T can be programmed and erased

in-system with a single 5-volt V_CCsupply. Inter-

nally generated and regulated voltages are pro-

vided for program and erase operations, so that

the device does not require a high voltage power

supply to perform those functions. The device can

also be programmed in standard EPROM pro-

grammers. Access times as fast as 55ns over the

full operating voltage range of 5.0 volts ± 10% are

offered for timing compatibility with the zero wait

state requirements of high speed microprocessors.

A 45ns version operating over 5.0 volts ± 5% is

also available. To eliminate bus contention, the

A[17:0]

RESET#

CE#

DQ[7:0]

OE#

W E#

Revision 4.1, May 2001

12 3 4 5 6 7...38

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HY29F002BC-12	ETC	获取价格	x8 Flash EEPROM
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HY29F002BC-12I	ETC	获取价格	x8 Flash EEPROM
HY29F002BC-45	ETC	获取价格	x8 Flash EEPROM
HY29F002BC-45E	ETC	获取价格	x8 Flash EEPROM
HY29F002BC-45I	ETC	获取价格	x8 Flash EEPROM
HY29F002BC-55	ETC	获取价格	x8 Flash EEPROM
HY29F002BC-55E	ETC	获取价格	x8 Flash EEPROM
HY29F002BC-55I	ETC	获取价格	x8 Flash EEPROM
HY29F002BC-70	ETC	获取价格	x8 Flash EEPROM

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