HX324C11T3K2/8
8GB (4GB 512M x 64-Bit x 2 pcs.)
DDR3-2400 CL11 240-Pin DIMM Kit
SPECIFICATIONS
CL(IDD)
11 cycles
Row Cycle Time (tRCmin)
48.125ns (min.)
260ns (min.)
Refresh to Active/Refresh
Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
35ns (min.)
TBD W* (per module)
94 V - 0
Operating Temperature
Storage Temperature
0o C to 85o C
-55o C to +100o C
*Power will vary depending on the SDRAM used.
DESCRIPTION
FEATURES
HyperX HX324C11T3K2/8 is a kit of two 512M x 64-bit (4GB)
DDR3-2400 CL11 SDRAM (Synchronous DRAM), 1Rx8
memory modules, based on eight 512M x 8-bit FBGA
components per module. Each module kit supports Intel®
XMP (Extreme Memory Profiles). Total kit capacity is 8GB.
Each module kit has been tested to run at DDR3-2400 at a
low latency timing of 11-13-14 at 1.65V. The SPDs are
programmed to JEDEC standard latency DDR3-1600 timing of
11-11-11 at 1.5V. Each 240-pin DIMM uses gold contact
fingers. The JEDEC standard electrical and mechanical
specifications are as follows:
• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
XMP TIMING PARAMETERS
• Internal(self) calibration : Internal self calibration through ZQ
• JEDEC: DDR3-1600 CL11-11-11 @1.5V
pin (RZQ : 240 ohm ± 1%)
• XMP Profile #1: DDR3-2400 CL11-13-14 @1.65V
• XMP Profile #2: DDR3-2133 CL11-13-13 @1.6V
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• Height 1.827” (46.41mm) w/ heatsink, single sided
component
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Document No. 4807104-001.A00 07/23/14 Page 1