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HX426C13SBK2-8 PDF预览

HX426C13SBK2-8

更新时间: 2024-11-25 01:19:15
品牌 Logo 应用领域
其他 - ETC 双倍数据速率
页数 文件大小 规格书
2页 321K
描述
DDR4-2666 CL13 288-Pin DIMM Kit

HX426C13SBK2-8 数据手册

 浏览型号HX426C13SBK2-8的Datasheet PDF文件第2页 
Memory Module Specifications  
HX426C13SBK2/8  
8GB (4GB 512M x 64-Bit x 2 pcs.)  
DDR4-2666 CL13 288-Pin DIMM Kit  
SPECIFICATIONS  
CL(IDD)  
15 cycles  
Row Cycle Time (tRCmin)  
46.5ns (min.)  
260ns (min.)  
Refresh to Active/Refresh  
Command Time (tRFCmin)  
Row Active Time (tRASmin)  
Maximum Operating Power  
UL Rating  
33ns (min.)  
TBD W*  
94 V - 0  
0o C to +85o C  
-55o C to +100o C  
Operating Temperature  
Storage Temperature  
*Power will vary depending on the SDRAM used.  
DESCRIPTION  
FEATURES  
HyperX HX426C13SBK2/8 is a kit of two 512M x 64-bit (4GB)  
DDR4-2666 CL13 SDRAM (Synchronous DRAM) 1Rx8, memory  
modules, based on eight 512M x 8-bit FBGA components per  
module. Total kit capacity is 8GB. Each module supports  
Intel® XMP (Extreme Memory Profiles). Each module has  
been tested to run at DDR4-2666 at a low latency timing of  
13-14-14 at 1.35V. The SPDs are programmed to JEDEC  
standard latency DDR4-2133 timing of 15-15-15 at 1.2V.  
Each 288-pin DIMM uses gold contact fingers. The JEDEC  
standard electrical and mechanical specifications are as  
follows:  
• Power Supply: VDD = 1.2V Typical  
• VDDQ = 1.2V Typical  
• VPP - 2.5V Typical  
• VDDSPD = 2.25V to 3.6V  
• On-Die termination (ODT)  
• 16 internal banks; 4 groups of 4 banks each  
• Bi-Directional Differential Data Strobe  
• 8 bit pre-fetch  
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)  
• Height 1.36” (34.57mm)  
XMP TIMING PARAMETERS  
JEDEC: DDR4-2133 CL15-15-15 @1.2V  
XMP Profile #1: DDR4-2666 CL13-14-14 @1.35V  
XMP Profile #2: DDR4-2400 CL13-13-13 @1.35V  
Continued >>  
hyperxgaming.com  
Document No. 4807411-001.A00 08/27/15 Page 1  

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