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HUF75321P3 PDF预览

HUF75321P3

更新时间： 2024-11-07 11:13:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
12页 789K
描述
N 沟道，UltraFET 功率 MOSFET，55V，35A，34mΩ

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中文翻译

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HUF75321P3 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：5.32
Is Samacsys：N外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：35 A最大漏极电流 (ID)：35 A
最大漏源导通电阻：0.034 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：93 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

HUF75321P3 数据手册

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中文翻译

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HUF75321P3 替代型号

型号 品牌 替代类型 描述 数据表
HUF75321P3 INTERSIL

功能相似

 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs
IRFZ40 MOTOROLA

功能相似

 Power Field Effect Transistors

与HUF75321P3相关器件

型号 品牌 获取价格 描述 数据表
HUF75321P3_NL FAIRCHILD

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 		Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Met
HUF75321S3 FAIRCHILD

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 		Power Field-Effect Transistor, 0.032ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET
HUF75321S3S FAIRCHILD

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 		35A, 55V, 0.034 Ohm, N-Channel UltraFET er MOSFETs
HUF75321S3S INTERSIL

获取价格

 		35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs
HUF75321S3S_NL FAIRCHILD

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 		暂无描述
HUF75321S3ST ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 31A I(D) | TO-263AB
HUF75329D3 FAIRCHILD

获取价格

 		20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs
HUF75329D3 INTERSIL

获取价格

 		20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs
HUF75329D3S FAIRCHILD

获取价格

 		20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs
HUF75329D3S INTERSIL

获取价格

 		20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs

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