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HSMS-8207-TR2 PDF预览

HSMS-8207-TR2

更新时间: 2024-09-16 04:58:03
品牌 Logo 应用领域
安捷伦 - AGILENT 微波混频二极管
页数 文件大小 规格书
5页 100K
描述
Surface Mount Microwave Schottky Mixer Diodes

HSMS-8207-TR2 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.17
外壳连接:ANODE AND CATHODE配置:RING, 4 ELEMENTS
最大二极管电容:0.26 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE频带:X BAND TO KU BAND
最大阻抗:150 ΩJESD-30 代码:R-PDSO-G4
JESD-609代码:e0元件数量:4
端子数量:4最大工作频率:14 GHz
最小工作频率:10 GHz最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified子类别:Microwave Mixer Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

HSMS-8207-TR2 数据手册

 浏览型号HSMS-8207-TR2的Datasheet PDF文件第2页浏览型号HSMS-8207-TR2的Datasheet PDF文件第3页浏览型号HSMS-8207-TR2的Datasheet PDF文件第4页浏览型号HSMS-8207-TR2的Datasheet PDF文件第5页 
Surface Mount Microwave  
Schottky Mixer Diodes  
HSMS-8101 Single  
Technical Data  
HSMS-8202 Series Pair  
HSMS-8207 Ring Quad  
HSMS-8209 Crossover Quad  
Features  
• Optimized for use at  
10-14 GHz  
Plastic SOT-23 Package  
Package Lead Code  
Identification  
(Top View)  
• Low Capacitance  
• Low Conversion Loss  
• Low RD  
SINGLE  
3
SERIES  
3
• Low Cost Surface Mount  
Plastic Package  
1
2
1
2
#1  
#2  
• Lead-free Option Available  
Plastic SOT-143 Package  
RING  
QUAD  
CROSS-OVER  
QUAD  
3
4
3
4
Description/Applications  
These low cost microwave  
Schottky diodes are specifically  
designed for use at X/Ku-bands  
and are ideal for DBS and VSAT  
downconverter applications. They  
are available in SOT-23 and  
SOT-143 standard package  
configurations.  
1
2
1
2
#7  
#9  
Note that Agilent's manufacturing  
techniques assure that dice found in  
pairs and quads are taken from  
adjacent sites on the wafer, assur-  
ing the highest degree of match.  
Absolute Maximum Ratings[1], TA = +25°C  
Notes:  
Symbol Parameter  
Unit  
Min.  
Max.  
1. Operation in excess of any one  
of these conditions may result  
in permanent damage to the  
device.  
2. Measured in an infinite heat  
sink at TCASE = 25°C. Derate  
linearly to zero at 150°C per  
diode.  
PT  
PIV  
TJ  
Total Device Dissipation[2]  
mW  
V
75  
4
Peak Inverse Voltage  
Junction Temperature  
°C  
°C  
+150  
+150  
TSTG, Top Storage and Operating  
Temperature  
-65  
ESD WARNING:  
Handling Precautions Should Be Taken To Avoid Static Discharge.  

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