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HSMS-8209-BLKG PDF预览

HSMS-8209-BLKG

更新时间: 2024-11-06 19:51:51
品牌 Logo 应用领域
安捷伦 - AGILENT 光电二极管
页数 文件大小 规格书
6页 105K
描述
Mixer Diode, X Band to KU Band, Silicon, LEAD FREE, PLASTIC PACKAGE-4

HSMS-8209-BLKG 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.17
外壳连接:ANODE AND CATHODE配置:CROSSOVER RING, 4 ELEMENTS
最大二极管电容:0.26 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE频带:X BAND TO KU BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
元件数量:4端子数量:4
最大工作频率:14 GHz最小工作频率:10 GHz
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
子类别:Microwave Mixer Diodes表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

HSMS-8209-BLKG 数据手册

 浏览型号HSMS-8209-BLKG的Datasheet PDF文件第2页浏览型号HSMS-8209-BLKG的Datasheet PDF文件第3页浏览型号HSMS-8209-BLKG的Datasheet PDF文件第4页浏览型号HSMS-8209-BLKG的Datasheet PDF文件第5页浏览型号HSMS-8209-BLKG的Datasheet PDF文件第6页 
Agilent HSMS-8101, 8202, 8207,  
8209 Surface Mount Microwave  
Schottky Mixer Diodes  
Data Sheet  
Features  
• Optimized for use at  
10-14 GHz  
• Low Capacitance  
• Low Conversion Loss  
Plastic SOT-23 Package  
Description/Applications  
These low cost microwave  
Schottky diodes are specifically  
designed for use at X/Ku-bands  
and are ideal for DBS and VSAT  
downconverter applications. They  
are available in SOT-23 and  
SOT-143 standard package  
configurations.  
• Low RD  
• Low Cost Surface Mount  
Plastic Package  
• Lead-free Option Available  
Package Lead Code  
Identification  
(Top View)  
Note that Agilent's manufacturing  
techniques assure that dice found in  
pairs and quads are taken from  
adjacent sites on the wafer, assur-  
ing the highest degree of match.  
Plastic SOT-143 Package  
SINGLE  
3
SERIES  
3
1
2
1
2
#1  
#2  
RING  
QUAD  
CROSS-OVER  
QUAD  
Absolute Maximum Ratings[1], TA = +25°C  
3
4
3
4
Symbol Parameter  
Unit  
Min.  
Max.  
PT  
PIV  
TJ  
Total Device Dissipation[2]  
mW  
V
75  
4
1
2
1
2
Peak Inverse Voltage  
Junction Temperature  
#7  
#9  
°C  
°C  
+150  
+150  
TSTG, Top Storage and Operating  
Temperature  
-65  
Attention:  
Notes:  
Observe precautions for  
handling electrostatic  
sensitive devices.  
1. Operation in excess of any one of these conditions may result in  
permanent damage to the device.  
2. Measured in an infinite heat sink at TCASE = 25°C. Derate linearly to  
zero at 150°C per diode.  
ESD Machine Model (Class A)  
ESD Human Body Model (Class 0)  
Refer to Agilent Application Note A004R:  
Electrostatic Discharge Damage and Control.  

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