Datasheet > HSM276SR

HSM276SR

更新时间： 2024-09-14 10:59:27

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管光电二极管
页数	文件大小	规格书
1页	36K
描述
Silicon Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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HSM276SR 数据手册

SMD Type

Diodes

Silicon Schottky Barrier Diode

HSM276SR

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High forward current, Low capacitance.

HSM276ASR which is interconnected in series configuration

is designed for balanced mixer use.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

MPAK package is suitable for high density surface mounting and high speed assembly.

1.Base

2.Emitter

3.collector

A b so lu te M a xim u m R a tin g s T a = 2 5

P aram eter

R everse voltage

S ym bol

V ^R

V alue

U nit

A verage rectified current

Junction tem perature

S torage tem perature

I^O*

m A

T ^j

125

T stg

-55 to + 125

Electrical Characteristics Ta = 25

Parameter

Reverse voltage

Symbol

Conditions

Min

Typ

Max

Unit

V^R

I^R

VR =1.0 mA

VR =0. 5 V

Reverse current

Forward current

Capacitance

I^F

VR =0. 5 V

V^R= 0.5V, f = 1 MHz

0.90

0.10

Capacitance deviation

ÄC

C=200pF, R= 0

Both forward and

ESD-Capability (Note 1)

reverse direction 1 pulse. (Note 1)

Note

1. Failure criterion ; I^R

100 A at VR =0.5 V

Marking

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