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HSD16M32F4V-12 PDF预览

HSD16M32F4V-12

更新时间: 2024-11-12 03:35:39
品牌 Logo 应用领域
HANBIT 动态存储器
页数 文件大小 规格书
11页 103K
描述
Synchronous DRAM Module 64Mbyte ( 16M x 32-Bit ) SMM based on 16Mx8, 4Banks, 4K Ref., 3.3V

HSD16M32F4V-12 数据手册

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HANBit  
HSD16M32F4V/VA  
Synchronous DRAM Module 64Mbyte ( 16M x 32-Bit ) SMM based on  
16Mx8, 4Banks, 4K Ref., 3.3V  
Part No. HSD16M32F4V/VA  
GENERAL DESCRIPTION  
The HSD16M32F4V/VA is a 16M x 32 bit Synchronous Dynamic RAM high density memory module. The module  
consists of four CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II packages is mounted on a 120-pin,  
single-sided, FR-4-printed circuit board., Two 0.1uF decoupling capacitors are mounted on the printed circuit board in  
parallel for each SDRAM. The HSD16M32F4V/VA is a SMM (Stackable Memory Module) designed and is intended for  
mounting into two 60-pin connector sockets. Synchronous design allows precise cycle control with the use of system  
clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows  
the same device to be useful for a variety of high bandwidth, high performance memory system applications All module  
components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.  
PIN ASSIGNMENT  
FEATURES  
Part Identification  
60-PIN P1 Connector  
60-PIN P2 Connector  
PIN Symbol PIN Symbol PIN  
Symbol  
PIN Symbol  
HSD16M32F4V :  
1
2
3
4
5
6
7
8
Vcc  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
Vcc  
DQ40  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
Vcc  
DQM4  
DQM5  
NC  
CKE0  
CKE1  
Vcc  
NC  
NC  
/CE2  
NC  
Vcc  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
Vss  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
Vss  
DQ8  
DQ9  
DQ10  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
Vss  
DQM0  
DQM1  
/WE  
CLK0  
CLK1  
Vss  
/CAS  
/RAS  
/CE0  
NC  
1
2
3
4
5
6
7
8
Vss  
DQ16  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
Vss  
DQ24  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
Vss  
DQM2  
DQM3  
NC  
BA0  
BA1  
A10/AP  
A0  
A1  
A2  
A3  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
Vcc  
DQ48  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
DQ54  
DQ55  
Vcc  
DQ56  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
Vcc  
DQM6  
DQM7  
NC  
A11  
A9  
A8  
A7  
A6  
A5  
Height from bottom to top 11.3mm  
HSD16M32F4VA :  
Height from bottom to top 7.3mm  
Burst mode operation  
Auto & self refresh capability (4096 Cycles/64ms)  
LVTTL compatible inputs and outputs  
Single 3.3V ±0.3V power supply  
MRS cycle with address key programs  
- Latency (Access from column address)  
- Burst length (1, 2, 4, 8 & Full page)  
- Data scramble (Sequential & Interleave)  
All inputs are sampled at the positive going edge  
of the system clock  
9
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
120pin SMM type FR4-PCB design  
The used device is 4Mx8bit x4Banks SDRAM  
Pin assignment is compatible with  
- HSD16M64F8V/VA  
- HSD32M64F8V/VA  
- HSD8M64F8V/VA  
28  
29  
30  
A4  
Vcc  
Vss  
Vss  
Stackable Memory Module TOP VIEW  
URL: www.hbe.co.kr  
1
HANBit Electronics Co.,Ltd  
REV 1.0 (August.2002).  

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