Datasheet > HSD16M64B4W-13

HSD16M64B4W-13

更新时间： 2024-11-12 03:20:43

品牌	Logo	应用领域
HANBIT		动态存储器
页数	文件大小	规格书
10页	106K
描述
Synchronous DRAM Module 128Mbyte(16Mx64-Bit), 144pin SO-DIMM, 4Banks, 8K Ref., 3.3V

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技术参数
数据手册

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HSD16M64B4W-13 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

HSD16M64B4W-13 数据手册

HANBit

HSD16M64B4W

Synchronous DRAM Module 128Mbyte(16Mx64-Bit), 144pin SO-DIMM,

4Banks, 8K Ref., 3.3V

Part No.

GENERAL DESCRIPTION

The HSD16M64B4W is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists

of four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.

Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The

HSD16M64B4W is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin

edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions

are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be

useful for a variety of high bandwidth, high performance memory system applications All module components may be

powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES

• Part Identification

HSD16M64B4W-10 : 100MHz (CL=2)

HSD16M64B4W-10L : 100MHz (CL=3)

HSD16M64B4W-12 : 125MHz (CL=3)

HSD16M64B4W-13 : 133MHz (CL=3)

• Burst mode operation

• Auto & self refresh capability (8192 Cycles/64ms)

• LVTTL compatible inputs and outputs

• Single 3.3V ±0.3V power supply

• MRS cycle with address key programs

- Latency (Access from column address)

- Burst length (1, 2, 4, 8 & Full page)

- Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock

• The used device is 4M x 16bit x 4Banks SDRAM

URL: www.hbe.co.kr

REV 1.0 (August.2002)

HANBit Electronics Co.,Ltd.

12 3 4 5 6 7...10

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HSD16M64B8W	HANBIT	获取价格	Synchronous DRAM Module 128Mbyte(16Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V
HSD16M64B8W-10	HANBIT	获取价格	Synchronous DRAM Module 128Mbyte(16Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V
HSD16M64B8W-10L	HANBIT	获取价格	Synchronous DRAM Module 128Mbyte(16Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V