Datasheet > HSD16M32M4V-F12

HSD16M32M4V-F12

更新时间： 2024-11-12 03:20:15

品牌	Logo	应用领域
HANBIT		动态存储器
页数	文件大小	规格书
10页	106K
描述
Synchronous DRAM Module 64Mbyte ( 16M x 32-Bit ) 72-Pin SIMM based on 16Mx8, 4Banks, 4K Ref., 3.3V

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HSD16M32M4V-F12 数据手册

HANBit

HSD16M32M4V

Synchronous DRAM Module 64Mbyte ( 16M x 32-Bit ) 72-Pin SIMM based on

16Mx8, 4Banks, 4K Ref., 3.3V

Part No.

GENERAL DESCRIPTION

The HSD16M32M4V is a 16M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists

of four CMOS 4M x 8 bit with 4banks Synchronous DRAMs in TSOP-II packages mounted on a 72-pin, FR-4-printed

circuit board. Two 0.01uF decoupling capacitor is mounted on the printed circuit board in parallel for each SDRAM. The

HSD16M32M4V is a SIMM designed. Synchronous design allows precise cycle control with the use of system clock. I/O

transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same

device to be useful for a variety of high bandwidth, high performance memory system applications All module

components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES

PIN ASSIGNMENT

• Part Identification

PIN SYMBOL PIN SYMBOL PIN SYMBOL

HSD16M32M4V-13/F13 :133MHz ( CL=3)

HSD16M32M4V-12/F12: 125MHz (CL=3)

HSD16M32M4V-10/F10: 100MHz (CL=2)

HSD16M32M4V-10L/F10L: 100MHz

HSD16M32M4V-66/F66: 66MHz (CL=2&3)

F means Auto & Self refresh with Low-Power (3.3V)

Vss

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQM0

Vcc

DQ14

DQ15

DQM1

/WE

/CAS

Vcc

DQ24

DQ25

DQ26

DQ27

DQ28

DQ29

DQ30

DQ31

DQM3

• Burst mode operation

/RAS

/CS0

• Auto & self refresh capability (4096 Cycles/64ms)

• LVTTL compatible inputs and outputs

• Single 3.3V ±0.3V power supply

• MRS cycle with address key programs

- Latency (Access from column address)

- Burst length (1, 2, 4, 8 & Full page)

- Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge

of the system clock

CLK0

CKE0

Vss

DQ16

DQ17

DQ18

DQ19

DQ20

DQ21

DQ22

DQ23

DQM2

Vcc

A10/AP

A11

• FR4-PCB design

Vss

• The used device is KM48S16030AT

• Pin assignment is compatible with

- HSD8M32M4V

DQ8

DQ9

DQ10

DQ11

DQ12

DQ13

Vcc

BA0

BA1

- HSD32M32M4V

Vss

72-PIN SIMM TOP VIEW

URL: www.hbe.co.kr

REV 1.0 (August.2002)

HANBit Electronics Co.,Ltd.

- 1 -

12 3 4 5 6 7...10

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与HSD16M32M4V-F12相关器件

型号	品牌	获取价格	描述	数据表
HSD16M32M4V-F13	HANBIT	获取价格	Synchronous DRAM Module 64Mbyte ( 16M x 32-Bit ) 72-Pin SIMM based on 16Mx8, 4Banks, 4K Re
HSD16M64B4W	HANBIT	获取价格	Synchronous DRAM Module 128Mbyte(16Mx64-Bit), 144pin SO-DIMM, 4Banks, 8K Ref., 3.3V
HSD16M64B4W-10	HANBIT	获取价格	Synchronous DRAM Module 128Mbyte(16Mx64-Bit), 144pin SO-DIMM, 4Banks, 8K Ref., 3.3V
HSD16M64B4W-10L	HANBIT	获取价格	Synchronous DRAM Module 128Mbyte(16Mx64-Bit), 144pin SO-DIMM, 4Banks, 8K Ref., 3.3V
HSD16M64B4W-12	HANBIT	获取价格	Synchronous DRAM Module 128Mbyte(16Mx64-Bit), 144pin SO-DIMM, 4Banks, 8K Ref., 3.3V
HSD16M64B4W-13	HANBIT	获取价格	Synchronous DRAM Module 128Mbyte(16Mx64-Bit), 144pin SO-DIMM, 4Banks, 8K Ref., 3.3V
HSD16M64B8A	HANBIT	获取价格	Synchronous DRAM Module 128Mbyte (16Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V
HSD16M64B8A-10	HANBIT	获取价格	DRAM
HSD16M64B8A-10L	HANBIT	获取价格	DRAM
HSD16M64B8A-12	HANBIT	获取价格	DRAM

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