HRL0103C

更新时间： 2024-09-20 03:42:43

品牌	Logo	应用领域
瑞萨 - RENESAS		整流二极管肖特基二极管光电二极管
页数	文件大小	规格书
6页	75K
描述
Silicon Schottky Barrier Diode for Rectifying

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

HRL0103C 技术参数

HRL0103C

Silicon Schottky Barrier Diode for Rectifying

REJ03G0367-0200

Rev.2.00

Mar 05, 2007

Features

•

Low reverse voltage drop and suitable for high efficiency reverse current.

Lineup of environmental friendly Halogen free type (HRL0103C-N)

Extremely small Flat Lead Package (EFP) is suitable for surface mount design.

Ordering Information

Part No.

HRL0103C

Laser Mark

Package Name

Package Code

EFP

PXSF0002ZA-A

HRL0103C-N

(Halogen-free type)

Pin Arrangement

Cathode mark

Mark

1. Cathode

2. Anode

REJ03G0367-0200 Rev.2.00 Mar 05, 2007

Page 1 of 5

12 3 4 5 6

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
HRL0103C_08	RENESAS	获取价格	Silicon Schottky Barrier Diode for Rectifying
HRL0103CKRF	RENESAS	获取价格	0.1 A, SILICON, SIGNAL DIODE, EFP, 2 PIN
HRL0103C-N	RENESAS	获取价格	Silicon Schottky Barrier Diode for Rectifying
HRL0103C-NKRF	RENESAS	获取价格	0.1A, SILICON, SIGNAL DIODE, EFP, 2 PIN
HRL12	ETC	获取价格	Analog IC
HRL1210W	CSB-BATTERY	获取价格	specially designed for high efficient discharge application
HRL1210W_16	CSB-BATTERY	获取价格	Cells Per Unit 6 Voltage Per Unit 12
HRL1210W_17	CSB-BATTERY	获取价格	Valve Regulated Lead Acid Battery
HRL12110W	CSB-BATTERY	获取价格	specially designde for high efficient discharge application
HRL12110W_12	CSB-BATTERY	获取价格	Its characteristics are high energy density, small footprint and high discharge efficiency