Datasheet > HMN1288DV

HMN1288DV

更新时间： 2024-11-12 03:42:19

品牌	Logo	应用领域
HANBIT		静态存储器
页数	文件大小	规格书
9页	98K
描述
Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HMN1288DV 数据手册

HANBit

HMN1288DV

Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V

Part No. HMN1288DV

GENERAL DESCRIPTION

The HMN1288DV Nonvolatile SRAM is a 1,048,576-bit static RAM organized as 131,072 bytes by 8 bits.

The HMN1288DV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited

write cycles of standard SRAM and integral control circuitry, which constantly monitors the single 3.3V, supply for an out-

of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain

the memory until after V_CCreturns valid and write protection is unconditionally enabled to prevent garbled data. In addition

the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy

source is switched on to sustain the memory until after V_CCreturns valid.

The HMN1288DV uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide

non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

FEATURES

w Access time : 70, 85, 120, 150 ns

PIN ASSIGNMENT

w High-density design : 1Mbit Design

w Battery internally isolated until power is applied

V_CC

A₁₅

/WE

A₁₃

A₈

A₉

A₁₁

/OE

A₁₀

/CE

DQ₇

DQ₆

DQ₅

DQ₄

DQ₃

A₁₆

A₁₄

A₁₂

A₇

A₆

A₅

A₄

A₃

A₂

A₁

A₀

DQ₀

DQ₁

DQ₂

V_SS

w Industry-standard 32-pin 128K x 8 pinout

w Unlimited write cycles

w Data retention in the absence of V_CC

w 10-years minimum data retention in absence of power

w Automatic write-protection during power-up/power-down

cycles

w Data is automatically protected during power loss

w Conventional SRAM operation; unlimited write cycles

OPTIONS

w Timing

70 ns

MARKING

32-pin Encapsulated Package

- 70

- 85

-120

-150

85 ns

120 ns

150 ns

URL : www.hbe.co.kr

Rev. 1.0 (June, 2004)

HANBit Electronics Co.,Ltd

FinePrint pdfFactory 평가판으로 만든 PDFhttp://www.softvision.co.kr

12 3 4 5 6 7...9

中文翻译

下载PDF

与HMN1288DV相关器件

型号	品牌	获取价格	描述	数据表
HMN1288DV-120	HANBIT	获取价格	Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V
HMN1288DV-120I	HANBIT	获取价格	Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V
HMN1288DV-150	HANBIT	获取价格	Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V
HMN1288DV-150I	HANBIT	获取价格	Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V
HMN1288DV-70	HANBIT	获取价格	Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V
HMN1288DV-70I	HANBIT	获取价格	Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V
HMN1288DV-85	HANBIT	获取价格	Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V
HMN1288DV-85I	HANBIT	获取价格	Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V
HMN1288J	ETC	获取价格	Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V
HMN1288J-55	ETC	获取价格	Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V

与HMN1288DV相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

HMN1288DV

HMN1288DV 数据手册

与HMN1288DV相关器件

与HMN1288DV相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HMN1288DV

HMN1288DV 数据手册

与HMN1288DV相关器件

与HMN1288DV相关文章

您还可以找

您在本页遇到什么问题？