5秒后页面跳转
HMN1288J-70I PDF预览

HMN1288J-70I

更新时间: 2024-09-23 21:54:47
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
8页 161K
描述
Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V

HMN1288J-70I 数据手册

 浏览型号HMN1288J-70I的Datasheet PDF文件第2页浏览型号HMN1288J-70I的Datasheet PDF文件第3页浏览型号HMN1288J-70I的Datasheet PDF文件第4页浏览型号HMN1288J-70I的Datasheet PDF文件第5页浏览型号HMN1288J-70I的Datasheet PDF文件第6页浏览型号HMN1288J-70I的Datasheet PDF文件第7页 
HANBit  
HMN1288J  
Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V  
Part No. HMN1288J  
GENERAL DESCRIPTION  
The HMN1288J Nonvolatile SRAM is a 1,048,576-bit static RAM organized as 131,072 bytes by 8 bits.  
The HMN1288J has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write  
cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-  
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the  
memory until after Vcc returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the  
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is  
switched on to sustain the memory until after VCC returns valid.  
The HMN1288J uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide non-  
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.  
PIN ASSIGNMENT  
FEATURES  
w Access time : 55, 70 ns  
1
2
3
4
5
6
7
8
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
/NBW  
A(15)  
A(16)  
/RST  
VCC  
/WE  
/OE  
NC  
w High-density design : 4Mbit Design  
w Battery internally isolated until power is applied  
w Industry-standard 34-pin 128K x 8 pinout  
w Unlimited write cycles  
NC  
A(14)  
A(13)  
A(12)  
A(11)  
A(10)  
A(9)  
A(8)  
A(7)  
A(6)  
A(5)  
A(4)  
A(3)  
A(2)  
A(1)  
A(0)  
/CE  
w Data retention in the absence of VCC  
w 10-years minimum data retention in absence of power  
w Automatic write-protection during power-up/power-down  
cycles  
9
D(7)  
D(6)  
D(5)  
D(4)  
D(3)  
D(2)  
D(1)  
D(0)  
VSS  
10  
11  
12  
13  
14  
15  
16  
17  
w Data is automatically protected during power loss  
w Conventional SRAM operation; unlimited write cycles  
JLCC  
TOP VIEW  
OPTIONS  
w Timing  
55 ns  
MARKING  
-55  
-70  
70 ns  
URL: www.hbe.co.kr  
1
HANBit Electronics Co.,Ltd.  
Rev.0.0 (FEBRUARY/ 2002)  

与HMN1288J-70I相关器件

型号 品牌 获取价格 描述 数据表
HMN1M8D HANBIT

获取价格

Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V
HMN1M8D-120 HANBIT

获取价格

Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V
HMN1M8D-120I HANBIT

获取价格

Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V
HMN1M8D-150 HANBIT

获取价格

Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V
HMN1M8D-150I HANBIT

获取价格

Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V
HMN1M8D-70 HANBIT

获取价格

Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V
HMN1M8D-70I HANBIT

获取价格

Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V
HMN1M8D-85 HANBIT

获取价格

Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V
HMN1M8D-85I HANBIT

获取价格

Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V
HMN1M8DN HANBIT

获取价格

Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 40Pin-DIP, 5V