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HMN1288DV-120I PDF预览

HMN1288DV-120I

更新时间: 2024-09-24 03:11:31
品牌 Logo 应用领域
HANBIT 静态存储器
页数 文件大小 规格书
9页 98K
描述
Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V

HMN1288DV-120I 数据手册

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HANBit  
HMN1288DV  
Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V  
Part No. HMN1288DV  
GENERAL DESCRIPTION  
The HMN1288DV Nonvolatile SRAM is a 1,048,576-bit static RAM organized as 131,072 bytes by 8 bits.  
The HMN1288DV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited  
write cycles of standard SRAM and integral control circuitry, which constantly monitors the single 3.3V, supply for an out-  
of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain  
the memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition  
the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy  
source is switched on to sustain the memory until after VCC returns valid.  
The HMN1288DV uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide  
non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.  
FEATURES  
w Access time : 70, 85, 120, 150 ns  
PIN ASSIGNMENT  
w High-density design : 1Mbit Design  
w Battery internally isolated until power is applied  
1
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3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
32  
31  
30  
29  
VCC  
A15  
NC  
/WE  
A13  
A8  
A9  
A11  
/OE  
A10  
/CE  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
NC  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
VSS  
w Industry-standard 32-pin 128K x 8 pinout  
w Unlimited write cycles  
w Data retention in the absence of VCC  
w 10-years minimum data retention in absence of power  
w Automatic write-protection during power-up/power-down  
cycles  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
w Data is automatically protected during power loss  
w Conventional SRAM operation; unlimited write cycles  
OPTIONS  
w Timing  
70 ns  
MARKING  
32-pin Encapsulated Package  
- 70  
- 85  
-120  
-150  
85 ns  
120 ns  
150 ns  
URL : www.hbe.co.kr  
Rev. 1.0 (June, 2004)  
1
HANBit Electronics Co.,Ltd  
FinePrint pdfFactory 평가판으로 만든 PDFhttp://www.softvision.co.kr  

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