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HMN12816D-70I PDF预览

HMN12816D-70I

更新时间: 2024-11-12 05:36:19
品牌 Logo 应用领域
HANBIT 静态存储器
页数 文件大小 规格书
9页 147K
描述
Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

HMN12816D-70I 数据手册

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HANBit  
HMN12816D  
Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V  
Part No. HMN12816D  
GENERAL DESCRIPTION  
The HMN12816D 128K x 16 nonvolatile SRAMs are 2,097,152-bit fully static, nonvolatile SRAMs, organized as  
131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which  
constantly monitors Vcc for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is  
automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package  
HMN12816D devices can be used in place of solutions which build nonvolatile 128Kx16 memory by utilizing a  
variety of discrete components. There is no limit on the number of write cycles that can be executed and no additional  
support circuitry is required for microprocessor interfacing.  
The HMN12816D uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide non-  
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.  
FEATURES  
PIN ASSIGNMENT  
w Access time : 70, 85, 120, 150ns  
w High-density design : 256KByte Design  
/CEU  
/CEL  
DQ15  
DQ14  
DQ13  
DQ12  
DQ11  
DQ10  
DQ9  
DQ8  
Vss  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
DQ2  
DQ1  
DQ0  
/OE  
1
2
3
4
40  
39  
38  
37  
Vcc  
/WE  
A16  
A15  
A14  
A13  
A12  
A11  
A10  
A9  
Vss  
A8  
A7  
A6  
A5  
w Battery internally isolated until power is applied  
w Industry-standard 40-pin 128K x 16 pinout  
w Unlimited write cycles  
5
6
7
8
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
w Data retention in the absence of VCC  
w 10-years minimum data retention in absence of power  
w Automatic write-protection during power-up/power-down  
cycles  
9
10  
11  
12  
13  
14  
15  
16  
17  
w Data is automatically protected during power loss  
w Conventional SRAM operation; unlimited write cycles  
A4  
A3  
A2  
A1  
18  
19  
20  
23  
22  
21  
OPTIONS  
w Timing  
70 ns  
MARKING  
A0  
- 70  
- 85  
-120  
-150  
85 ns  
40-pin Encapsulated Package  
120 ns  
150 ns  
URL : www.hbe.co.kr  
Rev. 0.0 (April, 2002)  
1
HANBit Electronics Co.,Ltd  

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