Datasheet > HMC637ALP5

HMC637ALP5

更新时间： 2023-12-20 18:46:19

品牌	Logo	应用领域
亚德诺 - ADI		放大器功率放大器
页数	文件大小	规格书
11页	262K
描述
GaAs、pHEMT、MMIC、1 W功率放大器，0.1 GHz至6 GHz

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HMC637ALP5 数据手册

HMC637ALP5E

Data Sheet

ABSOLUTE MAXIMUM RATINGS

THERMAL RESISTANCE

Table 2.

Thermal performance is directly linked to printed circuit

board (PCB) design and operating environment. Careful

attention to PCB thermal design is required.

Parameter

Drain Bias Voltage (V_DD

Gate Bias Voltage

V_GG1

Rating

)

14 V_DC

−3 V_DCto 0 V_DC

4 V_DCto 7 V_DC

25 dBm

θ_JCis the junction to case thermal resistance.

V_GG2

Table 3. Thermal Resistance

Package Type

RF Input Power (RFIN), V_DD= 12 V_DC

Channel Temperature

θ_JC

Unit

175°C

Continuous P_DISS(T = 85°C, Derate

95 mW/°C Above 85°C)

Maximum Peak Reflow Temperature

Storage Temperature Range

Operating Temperature Range

Electrostatic Discharge (ESD) Sensitivity

Human Body Model (HBM)

8.6 W

HCP-32-1

10.5

°C/W

¹Thermal impedance simulated values are based on a JEDEC 1S0P thermal

test board. See JEDEC JESD51.

260°C (MSL3¹Rating)

−65°C to +150°C

−40°C to +85°C

ESD CAUTION

Class 1B

¹MSL3 stands for Moisture Sensitivity Level 3.

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

Rev. C | Page 4 of 11

1 2 345 6 7...11

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