Datasheet > HMC637ALP5

HMC637ALP5

更新时间： 2023-12-20 18:46:19

品牌	Logo	应用领域
亚德诺 - ADI		放大器功率放大器
页数	文件大小	规格书
11页	262K
描述
GaAs、pHEMT、MMIC、1 W功率放大器，0.1 GHz至6 GHz

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HMC637ALP5 数据手册

Data Sheet

HMC637ALP5E

SPECIFICATIONS

ELECTRICAL SPECIFICATIONS

T_A= 25°C, drain bias voltage (V_DD) = 12 V, gate bias voltage (V_GG2) = 5 V, supply current (I_DD) = 400 mA (adjust V_GG1between −2 V to 0 V to

achieve I_DD= 400 mA typical), 50 Ω system, unless otherwise noted.

Table 1.

Parameter

Symbol

Test Conditions/Comments

Min

0.1

Typ

Max

Units

GHz

FREQUENCY RANGE

GAIN

Gain Flatness

0.ꢀ7

Gain Variation Over Temperature

RETURN LOSS

0.017

dB/°C

Input

Output

OUTPUT

Output Power for 1 dB Compression

Saturated Output Power

Output Third-Order Intercept

NOISE FIGURE

P1dB

P_SAT

OIP3

2ꢀ

dBm

P_OUTper tone = 10 dBm, 1 MHz spacing

2.0 GHz to 6.0 GHz

SUPPLY CURRENT

Drain Bias Voltage¹

I_DD

V_DD

320

400

11.7

12.0

12.7

480

I_DD= 400 mA

¹V_GG1set initially for nominal bias condition of V_DD= 12 V and V_GG2= 7 V to achieve I_DD= 400 mA typical; then adjusting V_DD0.7 V from 12 V to measure I_DDvariation.

Rev. C | Page 3 of 11

1 234 5 6 7...11

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