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HMC513LP5 PDF预览

HMC513LP5

更新时间: 2024-11-14 04:22:03
品牌 Logo 应用领域
HITTITE 振荡器压控振荡器输出元件
页数 文件大小 规格书
8页 398K
描述
MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 10.43 - 11.46 GHz

HMC513LP5 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:TransferredReach Compliance Code:compliant
ECCN代码:3A001.A.11.B风险等级:5
Is Samacsys:N最大控制电压:13 V
最小控制电压:2 VJESD-609代码:e0
安装特点:SURFACE MOUNT偏移频率:100 kHz
最大工作频率:11460 MHz最小工作频率:10430 MHz
最高工作温度:85 °C最低工作温度:-40 °C
振荡器类型:VOLTAGE CONTROLLED OSCILLATOR输出功率:5 dBm
相位噪声:-110 dBc/Hz物理尺寸:5.1mm x 5.1mm x 1.0mm
最大压摆率:290 mA最大供电电压:3.25 V
最小供电电压:2.75 V标称供电电压:3 V
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

HMC513LP5 数据手册

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HMC513LP5 / 513LP5E  
v00.0405  
MMIC VCO w/ HALF FREQUENCY OUTPUT  
& DIVIDE-BY-4, 10.43 - 11.46 GHz  
Typical Applications  
Features  
Low noise MMIC VCO w/Half Frequency, Divide-by-4  
Outputs for:  
Dual Output: Fo = 10.43 - 11.46 GHz  
Fo/2 = 5.21 - 5.73 GHz  
• VSAT Radio  
Pout: +7 dBm  
• Point to Point/Multipoint Radio  
• Test Equipment & Industrial Controls  
• Military End-Use  
Phase Noise: -110 dBc/Hz @100 KHz Typ.  
No External Resonator Needed  
QFN Leadless SMT Package, 25 mm2  
Functional Diagram  
General Description  
9
The HMC513LP5 & HMC513LP5E are GaAs InGaP  
Heterojunction Bipolar Transistor (HBT) MMIC  
VCOs. The HMC513LP5 & HMC513LP5E integrate  
resonators, negative resistance devices, varactor  
diodes and feature half frequency and divide-by-  
4 outputs. The VCO’s phase noise performance is  
excellent over temperature, shock, and process due to  
the oscillator’s monolithic structure. Power output is +7  
dBm typical from a +3V supply voltage. The prescaler  
function can be disabled to conserve current if not  
required. The voltage controlled oscillator is packaged  
in a leadless QFN 5x5 mm surface mount package,  
and requires no external matching components.  
Electrical Specifications, TA = +25° C, Vcc1, Vcc2 = +3V  
Parameter  
Min.  
Typ.  
Max.  
Units  
Fo  
Fo/2  
10.43 - 11.46  
5.215 - 5.73  
GHz  
GHz  
Frequency Range  
RFOUT  
RFOUT/2  
RFOUT/4  
+5  
+5  
-10  
+10  
+11  
-4  
dBm  
dBm  
dBm  
Power Output  
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT  
Tune Voltage  
-110  
275  
2
dBc/Hz  
V
Vtune  
2
13  
290  
10  
Supply Current  
Icc1 & Icc2  
240  
mA  
μA  
Tune Port Leakage Current (Vtune= 13V)  
Output Return Loss  
dB  
Harmonics/Subharmonics  
1/2  
3/2  
2nd  
3rd  
32  
26  
15  
28  
dBc  
dBc  
dBc  
dBc  
Pulling (into a 2.0:1 VSWR)  
Pushing @ Vtune= 5V  
Frequency Drift Rate  
5
25  
1
MHz pp  
MHz/V  
MHz/°C  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
9 - 108  

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