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HMC515LP5 PDF预览

HMC515LP5

更新时间: 2024-11-14 04:22:03
品牌 Logo 应用领域
HITTITE 振荡器输出元件
页数 文件大小 规格书
8页 372K
描述
MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 11.5 - 12.5 GHz

HMC515LP5 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:TransferredReach Compliance Code:compliant
ECCN代码:3A001.A.11.B风险等级:5
最大控制电压:13 V最小控制电压:2 V
JESD-609代码:e0安装特点:SURFACE MOUNT
偏移频率:100 kHz最大工作频率:12500 MHz
最小工作频率:11500 MHz最高工作温度:85 °C
最低工作温度:-40 °C振荡器类型:VOLTAGE CONTROLLED OSCILLATOR
输出功率:6 dBm相位噪声:-110 dBc/Hz
物理尺寸:5.1mm x 5.1mm x 1.0mm最大压摆率:240 mA
最大供电电压:5.25 V最小供电电压:4.75 V
标称供电电压:5 V表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

HMC515LP5 数据手册

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HMC515LP5 / 515LP5E  
v00.1005  
MMIC VCO w/ HALF FREQUENCY OUTPUT  
& DIVIDE-BY-4, 11.5 - 12.5 GHz  
Typical Applications  
Features  
Low noise MMIC VCO w/Half Frequency, Divide-by-4  
Outputs for:  
Dual Output: Fo = 11.5 - 12.5 GHz  
Fo/2 = 5.75 - 6.25 GHz  
• VSAT Radio  
Pout: +10 dBm  
• Point to Point/Multipoint Radio  
• Test Equipment & Industrial Controls  
• Military End-Use  
Phase Noise: -110 dBc/Hz @100 kHz Typ.  
No External Resonator Needed  
QFN Leadless SMT Package, 25 mm2  
Functional Diagram  
General Description  
9
The HMC515LP5 & HMC515LP5E are GaAs InGaP  
Heterojunction Bipolar Transistor (HBT) MMIC VCOs.  
The HMC515LP5 & HMC515LP5E integrate resona-  
tors, negative resistance devices, varactor diodes  
and feature half frequency and divide-by-4 outputs.  
The VCO’s phase noise performance is excellent over  
temperature, shock, and process due to the oscillator’s  
monolithic structure. Power output is +10 dBm typical  
from a +5V supply voltage. The prescaler function can  
be disabled to conserve current if not required. The  
voltage controlled oscillator is packaged in a leadless  
QFN 5x5 mm surface mount package, and requires no  
external matching components.  
Electrical Specifications, TA = +25° C, Vcc1, Vcc2 = +5V  
Parameter  
Min.  
Typ.  
Max.  
Units  
Fo  
Fo/2  
11.5 - 12.5  
5.75 - 6.25  
GHz  
GHz  
Frequency Range  
RFOUT  
RFOUT/2  
RFOUT/4  
+6  
+3  
-9  
+15  
+9  
-3  
dBm  
dBm  
dBm  
Power Output  
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT  
Tune Voltage  
-110  
200  
2
dBc/Hz  
V
Vtune  
2
13  
240  
10  
Supply Current  
Icc1 & Icc2  
160  
mA  
μA  
Tune Port Leakage Current (Vtune= 13V)  
Output Return Loss  
dB  
Harmonics/Subharmonics  
1/2  
3/2  
2nd  
3rd  
30  
35  
24  
40  
dBc  
dBc  
dBc  
dBc  
Pulling (into a 2.0:1 VSWR)  
Pushing @ Vtune= 5V  
Frequency Drift Rate  
8
6
MHz pp  
MHz/V  
MHz/°C  
1.2  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
9 - 124  

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