Datasheet > HMC413QS16GE

HMC413QS16GE

更新时间： 2024-01-08 17:15:07

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
9页	445K
描述
Power Amplifier SMT, 1.6 - 2.2 GHz

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技术参数
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HMC413QS16GE 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.25
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	18 dB	最大输入功率 (CW)：	15 dBm
JESD-609代码：	e3	最大工作频率：	2200 MHz
最小工作频率：	1600 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	NARROW BAND MEDIUM POWER
端子面层：	Matte Tin (Sn)

HMC413QS16GE 数据手册

HMC413QS16G / 413QS16GE

v04.0505

GaAs InGaP HBT MMIC

POWER AMPLIFIER, 1.6 - 2.2 GHz

Evaluation PCB

* For 5V operation on Vctl line,

select R1, R2 such that 3.6V is

presented on Pins 3 and 14.

List of Materials for Evaluation PCB 105000 ^[1]

The circuit board used in the ﬁnal application should

use RF circuit design techniques. Signal lines

should have 50 ohm impedance while the package

ground leads and exposed paddle should be con-

nected directly to the ground plane similar to that

shown. A sufficient number of via holes should be

used to connect the top and bottom ground planes.

The evaluation board should be mounted to an

appropriate heat sink. The evaluation circuit board

shown is available from Hittite upon request.

Item

J1 - J2

Description

PCB Mount SMA RF Connector

2 mm DC Header

2.2 pF Capacitor, 0603 Pkg.

10 pF Capacitor, 0402 Pkg.

330 pF Capacitor, 0603 Pkg.

2.2 μF Capacitor, Tantalum

16 nH Inductor 0603 Pkg.

C3 - C4

HMC413QS16G / HMC413QS16GE

Ampliﬁer

[2]

PCB

105018 Eval Board

[1] Reference this number when ordering complete evaluation PCB

[2] Circuit Board Material: Rogers 4350

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

_{responsibility is ass}F_umo_er_{d b}p_yr_Ai_nc_ae_log, _Dd_ee_vicl_eiv_se_forr_iy_ts,_ua_sen_{, n}d_ort_foo_{r a}p_nyla_infc_rine_geo_mer_nd_tse_or_fs_pa,_tep_ntl_se_oa_{r o}s_the_ercontact Hittite Microwave Corporation:

^{rights of third parties th}2^at0^maA^{y r}l^ep^suh^lta^fromRⁱo^tsa^usd^e.,^SC^peh^cife^icalm^tions^sf^so^ubr^jd^ec,^{t t}M^{o c}A^han0^ge1^w8^it2^ho4^{ut no}P^tich^eo^{. N}n^oe: _P^O9_hⁿ7_o^e8_n^T_e-^e_:2^c₇5^h₈ⁿ0₁^o_--₃^l3^o₂^g3₉^y_-4₄^W3₇^a₀^y₀F^,_•^Pa^._O^Ox_r:^._d^B9_e^o_r7^x_o8_n⁹-_l¹_i2_n⁰_e5^6,_a0^N_t-_w^o3^r_w^w3_w7^oo_.3_a^d_n^,_a^M_lo^A_g.⁰_c²_o⁰_m^62-9106

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

11 - 56

Application Support: Phone: 1-800-ANALOG-D

Trademarks and registered trademarks are the property of their respective owners.

Order On-line at www.hittite.com

1...5 6 789

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与HMC413QS16GE相关器件

型号	品牌	获取价格	描述	数据表
HMC413QS16GETR	ADI	获取价格	Power Amplifier SMT, 1.6 - 2.2 GHz
HMC413QS16GETR	HITTITE	获取价格	Narrow Band Medium Power Amplifier,
HMC413QS16GTR	HITTITE	获取价格	Narrow Band Medium Power Amplifier,
HMC414	ADI	获取价格	InGaP HBT功率放大器SMT，2.2 - 2.8 GHz
HMC414MS8G	HITTITE	获取价格	GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
HMC414MS8G_01	HITTITE	获取价格	GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
HMC414MS8G_09	HITTITE	获取价格	GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
HMC414MS8GE	HITTITE	获取价格	GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
HMC414MS8GTR	HITTITE	获取价格	暂无描述
HMC415	ADI	获取价格	InGaP HBT功率放大器SMT，4.9 - 5.9 GHz

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