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HM62V8512CLTS-5 PDF预览

HM62V8512CLTS-5

更新时间: 2024-11-13 20:20:23
品牌 Logo 应用领域
日立 - HITACHI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
14页 59K
描述
Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 8 X 13.40 MM, PLASTIC, TSOP1-32

HM62V8512CLTS-5 数据手册

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HM62V8512CTS Series  
4 M SRAM (512-kword × 8-bit)  
ADE-203-1258 (Z)  
Preliminary  
Rev. 0.0  
Mar. 15, 2001  
Description  
The Hitachi HM62V8512CTS Series is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62V8512CTS  
Series has realized higher density, higher performance and low power consumption by employing CMOS  
process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is  
suitable for battery backup system. It is packaged in TSOP I is available for high density surface mounting.  
Features  
Single 3.0 V supply: 2.7 V to 3.6 V  
Access time: 55/70 ns (max)  
Power dissipation  
Active: 6.0 mW/MHz (typ)  
Standby: 2.4 µW (typ)  
Completely static memory. No clock or timing strobe required  
Equal access and cycle times  
Common data input and output: Three state output  
Directly LV-TTL compatible: All inputs  
Battery backup operation  
Preliminary: The specification of this device are subject to change without notice. Please contact your  
nearest Hitachi’s Sales Dept. regarding specification.  

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