Datasheet > 存储 > SRAM> HM62V8512CLTTI-7

HM62V8512CLTTI-7

更新时间： 2024-09-24 22:19:03

品牌	Logo	应用领域
日立 - HITACHI		存储内存集成电路静态存储器光电二极管
页数	文件大小	规格书
13页	59K
描述
Wide Temperature Range Version4 M SRAM (512-kword x 8-bit)

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HM62V8512CLTTI-7 数据手册

HM62V8512CI Series

Wide Temperature Range Version

4 M SRAM (512-kword × 8-bit)

ADE-203-1215A (Z)

Rev. 1.0

Feb. 6, 2001

Description

The Hitachi HM62V8512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62V8512CI Series has

realized higher density, higher performance and low power consumption by employing CMOS process

technology (6-transistor memory cell). The HM62V8512CI Series offers low power standby power

dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 32-pin TSOP II.

Features

•

Single 3.0 V supply: 2.7 V to 3.6 V

Access time: 70 ns (max)

Power dissipation

Active: 6.0 mW/MHz (typ)

Standby: 2.4 µW (typ)

•

Completely static memory. No clock or timing strobe required

Equal access and cycle times

Common data input and output: Three state output

Directly LV-TTL compatible: All inputs and outputs

Battery backup operation

Operating temperature: –40 to +85˚C

Ordering Information

Type No.

Access time

70 ns

Package

HM62V8512CLTTI-7

400-mil 32-pin plastic TSOP II (TTP-32D)

12 3 4 5 6 7...13

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