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HM62W1400HTT-15

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HM62W1400HTT-15 数据手册

HM62W1400H Series

4M High Speed SRAM (4-Mword × 1-bit)

ADE-203-773E (Z)

Rev. 2.0

Nov. 11, 1998

Description

The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high

speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed

circuit designing technology. It is most appropriate for the application which requires high speed and high

density memory, such as cache and buffer memory in system. The HM62W1400H is packaged in 400-mil

32-pin SOJ and 400-mil 32-pin TSOP II for high density surface mounting.

Features

•

Single 3.3 V supply : 3.3 V ± 0.3 V

Access time 12/15 ns (max)

Completely static memory

No clock or timing strobe required

Equal access and cycle times

Directly TTL compatible

•

All inputs and outputs

•

Operating current: 180/160 mA (max)

TTL standby current: 60/50 mA (max)

CMOS standby current: 5 mA (max)

: 1 mA (max) (L-version)

•

Data retension current: 0.6 mA (max) (L-version)

Data retension voltage: 2 V (min) (L-version)

Center V_CCand V_SStype pinout

12 3 4 5 6 7...16

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