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HM62W16255HI PDF预览

HM62W16255HI

更新时间: 2024-09-24 22:35:39
品牌 Logo 应用领域
日立 - HITACHI 静态存储器
页数 文件大小 规格书
16页 93K
描述
4M High Speed SRAM (256-kword x 16-bit)

HM62W16255HI 数据手册

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HM62W16255HI Series  
4M High Speed SRAM (256-kword × 16-bit)  
ADE-203-1038B (Z)  
Rev. 2.0  
Jan. 20, 2000  
Description  
The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high  
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed  
circuit designing technology. It is most appropriate for the application which requires high speed, high  
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged  
in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII.  
Features  
Single 3.3 V supply: 3.3 V ± 0.3V  
Access time: 15 ns (max)  
Completely static memory  
No clock or timing strobe required  
Equal access and cycle times  
Directly TTL compatible  
All inputs and outputs  
Operating current: 160 mA (max)  
TTL standby current: 50 mA (max)  
CMOS standby current: 5 mA (max)  
Center VCC and VSS type pinout  
Temperature range: –40 to 85°C  

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