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HM62W16255CTTI12 PDF预览

HM62W16255CTTI12

更新时间: 2024-09-25 03:27:43
品牌 Logo 应用领域
日立 - HITACHI 静态存储器
页数 文件大小 规格书
17页 83K
描述
Wide Temperature Range Version 4M High Speed SRAM (256-kword ⅴ 16-bit)

HM62W16255CTTI12 数据手册

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HM62W16255HCI Series  
Wide Temperature Range Version  
4M High Speed SRAM (256-kword ´ 16-bit)  
ADE-203-1263A (Z)  
Rev. 1.0  
Nov. 1, 2001  
Description  
The HM62W16255HCI is a 4-Mbit high speed static RAM organized 256-kword ´ 16-bit. It has realized  
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit  
designing technology. It is most appropriate for the application which requires high speed, high density  
memory and wide bit width configuration, such as cache and buffer memory in system. The  
HM62W16255HCI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density  
surface mounting.  
Features  
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Single 3.3 V supply: 3.3 V ± 0.3 V  
Access time: 12 ns (max)  
Completely static memory  
¾ No clock or timing strobe required  
Equal access and cycle times  
Directly TTL compatible  
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·
¾ All inputs and outputs  
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·
·
·
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Operating current: 130 mA (max)  
TTL standby current: 40 mA (max)  
CMOS standby current: 5 mA (max)  
Center VCC and VSS type pinout  
Temperature range: –40 to +85°C  

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