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HM5264165FTT-A60 PDF预览

HM5264165FTT-A60

更新时间: 2024-10-27 22:18:11
品牌 Logo 应用领域
日立 - HITACHI 存储动态存储器
页数 文件大小 规格书
67页 853K
描述
64M LVTTL interface SDRAM 133 MHz/100 MHz

HM5264165FTT-A60 数据手册

 浏览型号HM5264165FTT-A60的Datasheet PDF文件第2页浏览型号HM5264165FTT-A60的Datasheet PDF文件第3页浏览型号HM5264165FTT-A60的Datasheet PDF文件第4页浏览型号HM5264165FTT-A60的Datasheet PDF文件第5页浏览型号HM5264165FTT-A60的Datasheet PDF文件第6页浏览型号HM5264165FTT-A60的Datasheet PDF文件第7页 
HM5264165F-75/A60/B60  
HM5264805F-75/A60/B60  
HM5264405F-75/A60/B60  
64M LVTTL interface SDRAM  
133 MHz/100 MHz  
1-Mword × 16-bit × 4-bank/2-Mword × 8-bit × 4-bank  
/4-Mword × 4-bit × 4-bank  
PC/133, PC/100 SDRAM  
ADE-203-940B (Z)  
Rev. 1.0  
Nov. 10, 1999  
Description  
The Hitachi HM5264165F is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi  
HM5264805F is a 64-Mbit SDRAM organized as 2097152-word × 8-bit × 4 bank. The Hitachi HM5264405F  
is a 64-Mbit SDRAM organized as 4194304-word × 4-bit × 4 bank. All inputs and outputs are referred to the  
rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP II.  
Features  
3.3 V power supply  
Clock frequency: 133 MHz/100 MHz (max)  
LVTTL interface  
Single pulsed RAS  
4 banks can operate simultaneously and independently  
Burst read/write operation and burst read/single write operation capability  
Programmable burst length: 1/2/4/8/full page  
2 variations of burst sequence  
Sequential (BL = 1/2/4/8/full page)  
Interleave (BL = 1/2/4/8)  

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