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HM5264405FLTT-A60 PDF预览

HM5264405FLTT-A60

更新时间: 2024-10-28 05:36:11
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路光电二极管动态存储器PC时钟
页数 文件大小 规格书
65页 498K
描述
64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword × 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM

HM5264405FLTT-A60 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP54,.46,32
针数:54Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.19访问模式:FOUR BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):100 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:R-PDSO-G54
JESD-609代码:e0长度:22.22 mm
内存密度:67108864 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:54
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP54,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
电源:3.3 V认证状态:Not Qualified
刷新周期:4096座面最大高度:1.2 mm
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.001 A子类别:DRAMs
最大压摆率:0.11 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

HM5264405FLTT-A60 数据手册

 浏览型号HM5264405FLTT-A60的Datasheet PDF文件第2页浏览型号HM5264405FLTT-A60的Datasheet PDF文件第3页浏览型号HM5264405FLTT-A60的Datasheet PDF文件第4页浏览型号HM5264405FLTT-A60的Datasheet PDF文件第5页浏览型号HM5264405FLTT-A60的Datasheet PDF文件第6页浏览型号HM5264405FLTT-A60的Datasheet PDF文件第7页 
HM5264165F-75/A60/B60  
HM5264805F-75/A60/B60  
HM5264405F-75/A60/B60  
64M LVTTL interface SDRAM  
133 MHz/100 MHz  
1-Mword × 16-bit × 4-bank/2-Mword × 8-bit × 4-bank  
/4-Mword × 4-bit × 4-bank  
PC/133, PC/100 SDRAM  
E0135H10 (Ver. 1.0)  
(Previous ADE-203-940B (Z))  
Apr. 25, 2001  
Description  
The HM5264165F is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The HM5264805F  
is a 64-Mbit SDRAM organized as 2097152-word × 8-bit × 4 bank. The HM5264405F is a 64-Mbit SDRAM  
organized as 4194304-word × 4-bit × 4 bank. All inputs and outputs are referred to the rising edge of the  
clock input. It is packaged in standard 54-pin plastic TSOP II.  
Features  
3.3 V power supply  
Clock frequency: 133 MHz/100 MHz (max)  
LVTTL interface  
Single pulsed RAS  
4 banks can operate simultaneously and independently  
Burst read/write operation and burst read/single write operation capability  
Programmable burst length: 1/2/4/8/full page  
2 variations of burst sequence  
Sequential (BL = 1/2/4/8/full page)  
Interleave (BL = 1/2/4/8)  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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