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HM5241605CJ-17 PDF预览

HM5241605CJ-17

更新时间: 2024-10-26 23:56:15
品牌 Logo 应用领域
其他 - ETC 内存集成电路光电二极管动态存储器时钟
页数 文件大小 规格书
57页 739K
描述
x16 SDRAM

HM5241605CJ-17 数据手册

 浏览型号HM5241605CJ-17的Datasheet PDF文件第2页浏览型号HM5241605CJ-17的Datasheet PDF文件第3页浏览型号HM5241605CJ-17的Datasheet PDF文件第4页浏览型号HM5241605CJ-17的Datasheet PDF文件第5页浏览型号HM5241605CJ-17的Datasheet PDF文件第6页浏览型号HM5241605CJ-17的Datasheet PDF文件第7页 
HM5241605C Series  
4M LVTTL interface SDRAM (128-kword × 16-bit)  
83 MHz/80 MHz/66 MHz/57 MHz  
ADE-203-381C (Z)  
Rev. 3.0  
Nov. 11, 1997  
Description  
All inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2  
banks for improved performance.  
Features  
3.3V Power supply  
Clock frequency: 80 MHz (VCC min = 3.0 V)/66 MHz/57 MHz (max)  
: 83 MHz (VCC min = 3.15 V)  
LVTTL interface  
Single pulsed RAS  
2 Banks can operates simultaneously and independently  
Burst read/write operation and burst read/single write operation capability  
Programmable burst length: 1/2/4/8/full page (256)  
Programmable burst sequence:  
Sequential  
Interleave  
Full page burst length capability  
Sequential burst  
Burst stop capability  
Programmable CAS latency: 1/2/3  
Byte control by DQMU and DQML  
1024 refresh cycles: 16 ms  
2 variations of refresh  
Auto refresh  
Self refresh  
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