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HM5259165BTD-A6 PDF预览

HM5259165BTD-A6

更新时间: 2024-10-26 22:36:47
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器PC
页数 文件大小 规格书
63页 360K
描述
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM

HM5259165BTD-A6 数据手册

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HM5259165B-75/A6  
HM5259805B-75/A6  
HM5259405B-75/A6  
512M LVTTL interface SDRAM  
133 MHz/100 MHz  
8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank  
/32-Mword × 4-bit × 4-bank  
PC/133, PC/100 SDRAM  
E0118H10  
Ver. 1.0  
Apr. 6, 2001  
Description  
The HM5259165B is a 512-Mbit SDRAM organized as 8388608-word × 16-bit × 4 bank. TheHM5259805B  
is a 512-Mbit SDRAM organized as 16777216-word × 8-bit × 4 bank. The HM5259405B is a 512-Mbit  
SDRAM organized as 33554432-word × 4-bit × 4 bank. All inputs and outputs are referred to the rising edge  
of the clock input. It is packaged in standard 54-pin plastic TSOP II.  
Features  
3.3 V power supply  
Clock frequency: 133 MHz/100 MHz (max)  
LVTTL interface  
Single pulsed RAS  
4 banks can operate simultaneously and independently  
Burst read/write operation and burst read/single write operation capability  
Programmable burst length: 1/2/4/8  
2 variations of burst sequence  
Sequential (BL = 1/2/4/8)  
Interleave (BL = 1/2/4/8)  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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