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HM51W18165ATT-6 PDF预览

HM51W18165ATT-6

更新时间: 2024-10-26 20:17:31
品牌 Logo 应用领域
日立 - HITACHI 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
36页 421K
描述
EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44

HM51W18165ATT-6 数据手册

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HM51W16165A Series  
HM51W18165A Series  
1048576-word × 16-bit Dynamic Random Access Memory  
ADE-203-372B (Z)  
Rev. 2.0  
Jul. 2, 1996  
Description  
The Hitachi HM51W16165A Series, HM51W18165A Series are CMOS dynamic RAMs organized as  
1,048,576-word × 16-bit. They employ the most advanced CMOS technology for high performance  
and low power. HM51W16165A Series, HM51W18165A Series offer Extended Data Out (EDO) Page  
Mode as a high speed access mode.  
Features  
Single 3.3 V (±0.3 V)  
High speed  
Access time: 60 ns/70 ns/80 ns (max)  
Low power dissipation  
Active mode : 468 mW/414 mW/360 mW (max) (HM51W16165A Series)  
: 666 mW/594 mW/540 mW (max) (HM51W18165A Series)  
Standby mode : 7.2 mW (max)  
: 0.54 mW (max) (L-version)  
EDO page mode capability  
Long refresh period  
4096 refresh cycles : 64 ms (HM51W16165A Series)  
: 128 ms (L-version)  
1024 refresh cycles : 16 ms (HM51W18165A Series)  
: 128 ms (L-version)  
This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS  
INSTRUMENTS.  

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EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
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x16 EDO Page Mode DRAM
HM51W18165BLTT-7 HITACHI

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EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
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16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
HM51W18165J-5 ELPIDA

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16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh
HM51W18165J-6 HITACHI

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16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
HM51W18165J-6 ELPIDA

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16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh
HM51W18165J-7 HITACHI

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16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
HM51W18165J-7 ELPIDA

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16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh
HM51W18165JI-6 ETC

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x16 EDO Page Mode DRAM